Related papers: Single-electron-parametron-based logic devices
The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's…
Electron counting of a single porphyrin molecule between two electrodes shows a crossover from sub- to super-Poissonian statistics as the bias voltage is scanned. This is attributed to the simultaneous activation of states with electron…
We present an exact single-electron picture that describes the correlated electron dynamics in strong laser fields. Our approach is based on the factorization of the electronic wavefunction as a product of a marginal and a conditional…
Electron evaporation plays an important role in the electron temperature evolution and thus expansion rate in low-density ultracold plasmas. In addition, evaporation is useful as a potential tool for obtaining colder electron temperatures…
Superconducting electronics are among the most promising alternatives to conventional CMOS technology thanks to the ultra-fast speed and ultra-high energy efficiency of the superconducting devices. Having a cryogenic control processor is…
We provide a self-contained theoretical analysis of the dynamical response of a one dimensional electron system, as confined in a semiconductor quantum wire, within the random phase approximation. We carry out a detailed comparison with the…
The paper presents an adaptive over-relaxation method for calculating the electric potential and field intensity, for a complex tunnel transistor structure involving a split gate and a shielding boundary. The accuracy and speed of the…
We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one…
The electroosmotic transfer (ratio of velocity of liquid to electric current density) and conductivity of disperse system were calculated as functions of volume fraction of disperse particles. The considered model of electric double layer…
The flow of a thermoelectric current through a semiconductor of submicron dimensions is analyzed. The rate of surface relaxation of the energy is assumed to be much higher than the rate of electron-electron collisions. Under these…
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. To analyze…
We investigate the distribution of waiting times between electrons emitted from a periodically driven single-electron turnstile. To this end, we develop a scheme for analytic calculations of the waiting time distributions for arbitrary…
It has been predicted that in the presence of a sufficiently high-dissipative environment transport in a small tunnel junction can become extremely regular, giving rise to the phenomenon of single-electron tunneling oscillations. Recent…
Electron diffraction through a thin patterned silicon membrane can be used to create complex spatial modulations in electron distributions by varying the intensity of different reflections using parameters such as crystallographic…
Exploring the use of individual molecules as active components in electronic devices has been at the forefront of nanoelectronics research in recent years. Compared to semiconductor microelectronics, modeling transport in single-molecule…
Since the discovery of high-temperature superconductivity in the thin-film FeSe/SrTiO$_3$ system, iron selenide and its derivates have been intensively scrutinized. Using ab initio density functional theory calculations we review the…
We have applied the Numerical Renormalization Group method to study a mesoscopic system consisting of two samples of metal separated by an insulating barrier, with nanometer dimensions, which allows the tunnelling of a single electron from…
We characterize the single-electron energies and the wavefunction structure of arrays with two, three, and four phosphorus atoms in silicon by implementing atomistic tight-binding calculations and analyzing wavefunction overlaps to identify…
We apply the supergraph with spurion technique to compute the renormalization of one-loop diagrams that contributes to electron and selectron self energies in a softly broken Supersymmetric Quantum Electrodynamics (SQED). In particular, we…
The cellular automaton is a widely known model of both reversible and irreversible computations. The family of reversible second-order cellular automata considered in this work is appropriate both for construction of logic gates and…