Excess dissipation in a single-electron box: The Sisyphus resistance
Superconductivity
2015-05-13 v2 Other Condensed Matter
Abstract
We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.
Keywords
Cite
@article{arxiv.0902.4316,
title = {Excess dissipation in a single-electron box: The Sisyphus resistance},
author = {F. Persson and C. M. Wilson and M. Sandberg and G. Johansson and P. Delsing},
journal= {arXiv preprint arXiv:0902.4316},
year = {2015}
}
Comments
5 pages, 3 figures