Related papers: Quantum Mott transition in a silicon quantum dot
An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…
We consider a lateral double-dot system in the Coulomb blockade regime with a single spin-1/2 on each dot, mutually coupled by an anti-ferromagnetic exchange interaction. Each of the two dots is contacted by two leads. We demonstrate that…
The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid…
The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…
In the context of a semiconductor based implementation of a quantum computer the idea of a quantum storage bit is presented and a possible implementation using a double quantum dot structure is considered. A measurement scheme using a…
Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics…
The realization of a quantum computer represents a tremendous scientific and technological challenge due to the extreme fragility of quantum information. The physical support of information, namely the quantum bit or qubit, must at the same…
A quantum computer based on an asymmetric coupled dot system has been proposed and shown to operate as the controlled-NOT-gate. The basic idea is (1) the electron is localized in one of the asymmetric coupled dots. (2)The electron transfer…
Single electron tunneling is studied in a many electron quantum dot in high magnetic fields. For such a system multiple transitions of the spin configuration are theoretically predicted. With a combination of spin blockade and Kondo effect…
Electrons undergoing a Mott transition may shed their charge but persist as neutral excitations of a quantum spin liquid (QSL). We introduce concrete two-dimensional models exhibiting this exotic behavior as they transition from…
We study peculiarities of transport through a Coulomb blockade system tuned to the vicinity of the spin transition in its ground state. Such transitions can be induced in practice by application of a magnetic field. Tunneling of electrons…
The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states…
We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set…
We consider bosonic dipolar molecules in an optical lattice prepared in a mixture of different rotational states. The 1/r^3 interaction between molecules for this system is produced by exchanging a quantum of angular momentum between two…
Kondo effect in the vicinity of a singlet-triplet transition in a vertical quantum dot is considered. This system is shown to map onto a special version of the two-impurity Kondo model. At any value of the control parameter, the system has…
Three terminal tunnelling experiments on quantum dots in the Coulomb blockade regime allow a quantitative determination of the coupling strength of individual quantum states to the leads. Exploiting this insight we have observed independent…
I show that the quantum critical points observed in heavy fermions (the `Kondo breakdown') and in doped cuprates can be understood in terms of concealed Mott criticality. In this picture, one species of electrons undergoes a Mott…
We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
Using exact diagonalization we study the low energy Hilbert space of the two-electron, two-quantum dot artificial molecule under a perpendicular magnetic field. We show that electrons bind to vortices to induce several spin transitions…