Related papers: Quantum Mott transition in a silicon quantum dot
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system…
We consider the full driven quantum dynamics of a qubit realized as spin of electron in a one-dimensional double quantum dot with spin-orbit coupling. The driving perturbation is taken in the form of a single half-period pulse of electric…
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in…
Experiments show that the Cooper pair transport in the insulator phase that forms at thin film superconductor to insulator transitions (SIT) is simply activated. This activated behavior depends on the microscopic factors that drive the…
The conductance through a finite quantum dot network is studied as a function of inter-dot coupling. As the coupling is reduced, the system undergoes a transition from the antidot regime to the tight binding limit, where Coulomb resonances…
Highly accurate quantum electron dynamics calculations demonstrate that energy can be efficiently transferred between quantum dots. Specifically, in a double quantum dot an incoming electron is captured by one dot and the excess energy is…
An architecture for a quantum computer is presented in which spins associated with donors in silicon function as qubits. Quantum operations on the spins are performed using a combination of voltages applied to gates adjacent to the spins…
Studying quantum properties in solid-state systems is a significant avenue for research. In this scenario, double quantum dots (DQDs) appear as a versatile platform for technological breakthroughs in quantum computation and nanotechnology.…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is…
We describe the conditional and unconditional dynamics of two coupled quantum dots when one dot is subjected to a measurement of its occupation number using a single electron transistor (SET). The measurement is made when the bare tunneling…
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…
At sufficiently low temperatures, condensed-matter systems tend to develop order. An exception are quantum spin-liquids, where fluctuations prevent a transition to an ordered state down to the lowest temperatures. While such states are…
Since the first demonstration of coherent control of a quantum state of a superconducting charge qubit a variety of Josephson-junction-based qubits have been implemented with remarkable progress in coherence time and read-out schemes.…
In this work we present a model qubit whose basis states are eigenstates of a multi-layered quantum dot. We show that the proper design of the quantum dot results in qubit states that have excellent dynamical properties when a…
Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
Electron tunneling through a system formed by two coupled quantum dots in a parallel geometry is considered within a generalized Anderson model. The dots are assumed to have nearly equal radii but different (and tunable) gate voltages. In…
We consider a `quantum dot' in the Coulomb blockade regime, subject to an arbitrarily large source-drain voltage V. When V is small, quantum dots with odd electron occupation display the Kondo effect, giving rise to enhanced conductance.…
Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…