Related papers: Single-electron transistor effect in a two-termina…
We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent…
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top…
Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a…
We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as…
We discuss the suppression of Coulomb charging effects on a small metallic island coupled to an electrode by a tunnel junction. At high temperatures the quantum corrections to the classical charging energy $E_c=e^2/2C$, where $C$ is the…
Spin dependent single electron tunneling in a ferromagnetic double junction is investigated theoretically in the limit of incoherent sequential tunneling. The junction consists of a small nonmagnetic metallic grain with discrete energy…
We consider the conductance of a one-dimensional wire interrupted by a double-barrier structure allowing for a resonant level. Using the electron-electron interaction strength as a small parameter, we are able to build a non-perturbative…
We propose a new method of direct detection of spin accumulation, which overcomes problems of previous measurement schemes. A spin dependent current in a single-electron transistor with ferromagnetic electrodes leads to spin accumulation on…
We find that tunnel junctions are not needed to provide single electron effects in a metallic island. Eventually the tunnel junction may be replaced by an arbitrary scatterer. It is important that even a {\it diffusive} scatterer provides a…
Effects of the single-electron tunneling and the Coulomb blockade in a cluster structure (the molecular transistor) are investigated theoretically. In the framework of the particle-in-a-box model for the spherical and disk-shaped gold…
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…
Electron tunneling through small metallic islands with low capacitance is studied. The large charging energy in these systems is responsible for nonperturbative Coulomb blockade effects. We further consider the effect of electron…
We study electron transport through a small metallic island in the perturbative regime. Using a diagrammatic real-time technique, we calculate the occupation of the island as well as the conductance through the transistor at arbitrary…
We investigate the properties of a hybrid single electron transistor, involving a small superconducting island sandwiched between normal metal leads, which is driven by dc plus ac voltages. In order to describe its properties we derive from…
The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to…
We evaluate the detector nonideality (and energy sensitivity) of a normal-state single-electron transistor (SET) in the cotunneling regime in a two-charge-state approximation. For small conductances and at zero temperature, the SET's…
Single electron tunneling into small superconducting islands is sensitive to the gap energy of the excitations created in the process and, hence, depends on the parity of the electron number in the island. We study these effects by…
We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the…
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by…
We investigate electron transport through a mono-atomic wire which is tunnel coupled to two electrodes and also to the underlying substrate. The setup is modeled by a tight-binding Hamiltonian and can be realized with a scanning tunnel…