Related papers: Absence of Localization in Certain Field Effect Tr…
The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…
Measurements of the magnetoresistivity of graphite with a high degree of control of the angle between the sample and magnetic field indicate that the metal-insulator transition (MIT), shown to be induced by a magnetic field applied…
Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…
We investigate metal-insulator transitions on an interacting two-dimensional Dirac fermion system using the determinant quantum Monte Carlo method. The interplay between Coulomb repulsion, disorder and magnetic fields, drives the otherwise…
The conductance of an open quench-disordered two-dimensional (2D) electron system subject to an in-plane magnetic field is calculated within the framework of conventional Fermi liquid theory applied to actually a three-dimensional system of…
For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last several years, however, unusual behavior suggestive of such a…
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…
The disorder-driven metal-insulator transition in the quantum spin Hall systems is studied by scaling analysis of the Thouless conductance $g$. Below a critical disorder strength, the conductance is independent of the sample size $M$, an…
The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…
We have measured the electrical conductivity of Ge:Ga samples prepared by neutron-transmutation doping of isotopically enriched 70Ge single crystals in order to study the metal-insulator transition (MIT) ruling out an ambiguity due to…
In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…
High quality strongly correlated two-dimensional (2D) electron systems at low temperatures $T\rightarrow 0$ exhibits an apparent metal-to-insulator transition (MIT) at a large $r_s$ value around 40. We have measured the magnetoresistance of…
The discovery of a metallic state and a metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenges one of the most influential paradigms of modern mesoscopic physics, namely, that "there is no true metallic…
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…
The 2D metal-insulator transition can be induced either by decreasing the carrier density or by increasing the spin polarization by applying a magnetic field parallel to the plane. Using experimental results for the shift in critical…
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…
A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…
We study a spinless two-band model at half-filling in the limit of infinite dimensions. The ground state of this model in the non-interacting limit is a band-insulator. We identify transitions to a metal and to a charge-Mott insulator,…