Related papers: Anisotropic GaAs island phase grown on flat GaP: s…
While quasi-two-dimensional (layered) materials can be highly anisotropic, their asymptotic long-distance behavior generally reflects the properties of a fully three dimensional phase of matter. However, certain topologically ordered…
The formation of atomic wires via pseudomorphic step-edge decoration on vicinal silicon surfaces has been analyzed for Ga on the Si(112) surface using Scanning Tunneling Microscopy and Density Functional Theory calculations. Based on a…
In a 2D electron system in (001) GaAs/AlGaAs upon filling high Landau levels, it was recently observed a new class of collective states, which are recognized now to relate to the spontaneous formation of a charge density wave (``stripe…
Electron acoustic waves (EAWs) are nonlinear plasma modes characterized by electron trapping, which suppresses the usual Landau damping. Despite being predicted in the 1990s, their excitation and decay mechanisms remain a subject of active…
We show that expanding or contracting Kasner universes are unstable due to the amplification of gravitational waves (GW). As an application of this general relativity effect, we consider a pre-inflationary anisotropic geometry characterized…
The Stranski-Krastanov growth kinetics of undislocated (coherent) 3-dimensional islands is studied with a self-consistent mean field rate theory that takes account of elastic interactions between the islands. The latter are presumed to…
Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic…
We investigate impacts of long-wavelength gravitational waves (GWs) on nonlinear structure formation by utilizing the tidal separate universe simulations. Based on the equivalence of a long-wavelength GW to a uniform tidal field in a local…
Electrostatic waves in a collision-free unmagnetized plasma of electrons with fixed ions are investigated for electron equilibrium velocity distribution functions that deviate slightly from Maxwellian. Of interest are undamped waves that…
Magneto-transport experiments on high mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures have revealed striking anomalies near half-filling of several spin-resolved, yet highly excited, Landau levels. These anomalies…
Energies and wave functions of edge states in twodimensional electron gas are evaluated for a finite step potential barrier model. The spectrum, instead of smooth bending of Landau branches in the vicinity of the barrier acquires a steplike…
We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature,…
Effect of an anisotropic detachment on a heteroepitaxial island shape is studied by means of a kinetic Monte Carlo simulation of a square lattice gas model. Only with molecular deposition followed by surface diffusion, islands grow in a…
Heteroepitaxial self-assembled quantum dots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth whereby a growing planar film becomes unstable after an initial wetting layer…
A highly unusual pattern of strong multiple resonances for bulk electromagnetic waves is predicted and analysed numerically in thick periodic holographic gratings in a slab with the mean permittivity that is larger than that of the…
The diffusivity of Ga and Al adatoms on the (2x4) reconstructed GaAs(001) surface are evaluated using detailed ab initio total energy calculations of the potential energy surface together with transition state theory. A strong diffusion…
We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite GaAs cores between 20-40\,nm induce large confinement energies of several tens of meV, allowing us to experimentally resolve up to four well…
Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal…
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam…
The magnetic anisotropy of a planar array of Ga$_{x}$Fe$_{4-x}$N nanocrystals (NCs) embedded in a GaN host is studied by ferromagnetic resonance. X-ray diffraction and transmission electron microscopy are employed to determine the phase and…