Related papers: Quantized Conductance of One-Dimensional Doped Mot…
The method is proposed adapted for calculating the T=0 conductance of arbitrarily stretched disordered conducting strips in terms of the Kubo theory. The 2D scattering problem is solved through exact one-dimensionalization in mode…
We investigate the temperature dependence of optical absorption spectra of one-dimensional (1D) and two-dimensional (2D) Mott insulators by using an effective model in the strong-coupling limit of a half-filed Hubbard model. In the…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…
For $\beta$-$\mathrm{Ga_2O_3}$ only little information exist concerning the thermal properties, especially the thermal conductivity $\lambda$. Here, the thermal conductivity is measured by applying the electrical 3$\omega$-method on…
We show numerically that the nature of the doping induced metal-insulator transition in the two-dimensional Hubbard model is radically altered by the inclusion of a term, $W$, which depends upon a square of a single-particle…
We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of…
At low energies the charge sector of one dimensional Mott insulators can be described in terms of a quantum Sine-Gordon model. Using exact results derived from integrability it is possible to determine dynamical properties like the…
Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…
A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…
High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…
The doping and temperature dependent conductivity of electron-doped cuprates is analysed. The variation of kinetic energy with doping is shown to imply that the materials are approximately as strongly correlated as the hole-doped materials.…
We present here a simple qualitative model that interpolates between the high and low temperature properties of quasi-1D conductors. At high temperatures we argue that transport is governed by inelastic scattering whereas at low…
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…
We discuss the physics of a of a spin-1 quantum dot, coupled to two metallic leads and develop a simple model for the temperature dependence of its conductance. Such quantum dots are described by a two-channel Kondo model with asymmetric…
An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…
We study the optical response of a strongly correlated electron system near the metal-insulator transition using a mapping to the sine-Gordon model. With semiclassical quantization, the spectral weight is distributed between a Drude peak…
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…
The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…
We have measured the electrical conductivity of Ge:Ga samples prepared by neutron-transmutation doping of isotopically enriched 70Ge single crystals in order to study the metal-insulator transition (MIT) ruling out an ambiguity due to…