Related papers: Fractional Quantum Hall Effect Measurements at Zer…
We construct an algebraic description for the ground state and for the static response of the quantum Hall plateaux with filling factor $\nu=N/(2N+1)$ in the large $N$ limit. By analyzing the algebra of the fluctuations of the shape of the…
The observation of the fractional quantum Hall (FQH) effect in 2D electron gases ushered in investigations of topological phases driven by strong electron correlations. Their remarkable features include fractionalized elementary…
The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional,…
While the integer quantum Hall effect of composite fermions manifests as the prominent fractional quantum Hall effect (FQHE) of electrons, the FQHE of composite fermions produces further, more delicate states, arising from a weak residual…
We study the zero-temperature phase diagram and fractional excitation when a thin film of 3D topological insulator has two competing masses: T- symmetric exciton condensation and T- breaking Zeeman effect. Two topologically distinct phases…
Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic…
In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic…
We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…
We studied neutral excitations in a two-dimensional electron system with an orbital momentum $\Delta M = 1$ and spin projection over magnetic field axis $\Delta S_z = 1$ in the vicinity of a filling factor of 3/2. It is shown that the 3/2…
We present precision measurements of the fractional quantized Hall effect where the quantized resistance $R^{[1/3]}$ in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance $R^{[2]}$, represented…
We study the quantum Hall effect in the surface states of topological insulator in the presence of a perpendicular magnetic field in the framework of edge states. Motion of Dirac fermions will form descrete Landau levels, among which a…
We discuss anomalous fractional quantum Hall effect that exists without external magnetic field. We propose that excitations in such systems may be described effectively by non-interacting particles with the Hamiltonians defined on the…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
We analytically calculate gaps for the 1/3, 2/5, and 3/7 polarized and partially polarized Fractional Quantum Hall states based on the Hamiltonian Chern-Simons theory we have developed. For a class of potentials that are soft at high…
We report tilted-field magnetotransport measurements of two-dimensional electron systems in a 200 Angstrom-wide Al(0.13)Ga(0.87)As quantum well. We extract the energy gap for the quantum Hall state at Landau level filling \nu =1 as a…
The fractional quantum anomalous Hall effect has recently been experimentally observed in zero-field fractional Chern insulators (FCI). However, an outstanding challenge is the presence of a substantial longitudinal resistance $R_{xx}$ (a…
We argue that a correlated fluid of electrons and holes can exhibit a fractional quantum Hall effect at zero magnetic field analogous to the Laughlin state at filling $1/m$. We introduce a variant of the Laughlin wavefunction for electrons…
The fractional quantum Hall effect (FQHE) occurs at certain magnetic field strengths B*(n) in a two-dimensional electron gas of density n at strong magnetic fields perpendicular to the plane of the electron gas. At these magnetic fields…
We use the voltage biased tip of a scanning force microscope at a temperature of 35\,mK to locally induce the fractional quantum Hall state of $\nu=1/3$ in a split-gate defined constriction. Different tip positions allow us to vary the…
It has been well-known that topological phenomena with fractional excitations, i.e., the fractional quantum Hall effect (FQHE) \cite{Tsui1982} will emerge when electrons move in Landau levels. In this letter, we report the discovery of the…