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We study strong tunneling (i.e. transmission $h/e^2R_T \gg 1$) in the single-electron box with many transverse modes at zero temperature. We develop a new renormalization group method which includes all charge states and requires no initial…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Jürgen König , Herbert Schoeller

We consider the transport spectroscopy of a quantum dot with an even number of electrons at finite bias voltage within the Coulomb blockade diamond. We calculate the tunneling current due to the elastic and inelastic co-tunneling processes…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 M. R. Wegewijs , Yu. V. Nazarov

We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Teemu Pohjola , Jürgen König , Herbert Schoeller , Gerd Schön

We perform a systematic quantum Monte Carlo study of the pairing correlation in the $S_4$ symmetric microscopic model for iron-based superconductors. It is found that the pairing with an extensive s-wave symmetry robustly dominates over…

Strongly Correlated Electrons · Physics 2013-03-07 Tianxing Ma , Hai-Qing Lin , Jiangping Hu

We investigate transport in weakly-coupled metal nanoparticle arrays, focusing on the regime where tunneling is competing with strong single electron charging effects. This competition gives rise to an interplay between two types of charge…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 T. B. Tran , I. S. Beloborodov , Jingshi Hu , X. M. Lin , T. F. Rosenbaum , H. M. Jaeger

We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission.…

We theoretically investigate resonant tunneling through a linear array of quantum dots with subsequent tunnel coupling. We consider two limiting cases: (i) strong Coulomb blockade, where only one extra electron can be present in the array…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 M. R. Wegewijs , Yu. V. Nazarov

Motivated by the unique dispersions close to the two dimensional band crossing in a topologically charged nodal surface semimetal (NSSM) spectrum, we perform theoretical analysis of quantum tunnelling through a junction consisting of such…

Mesoscale and Nanoscale Physics · Physics 2026-01-27 Bhaskar Pandit , Debabrata Sinha , Satyaki Kar

We find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Serguei Vorojtsov

The tunneling conductance spectra of a normal-metal/insulator/quasi-one-dimensional superconductor is calculated by using the Blonder-Tinkham-Klapwijk formulation. The pairing symmetry of the superconductor is assumed to be $p$, $d$, and…

Superconductivity · Physics 2007-05-23 N. Stefanakis

We propose an idea for probing spin states of two coupled quantum dots (CQD), by the dc Josephson current flowing through them. This theory requires weak coupling between CQD and electrodes, but allows arbitrary inter-dot tunnel coupling,…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Yu Zhu , Qing-feng Sun , Tsung-han Lin

The nature of the quantum valence transition is studied in the one-dimensional periodic Anderson model with Coulomb repulsion between f and conduction electrons by the density-matrix renormalization group method. It is found that the…

Strongly Correlated Electrons · Physics 2007-05-23 Shinji Watanabe , Masatoshi Imada , Kazumasa Miyake

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…

Mesoscale and Nanoscale Physics · Physics 2018-04-04 Zhanbin Bai , Xiangkai Liu , Zhen Lian , Kangkang Zhang , Guanghou Wang , Su-Fei Shi , Xiaodong Pi , Fengqi Song

The tunneling spectra of small metallic grains shows an unusual structure of the differential conductance peaks. Namely, resonance peaks appear in clusters, or develop substructure as the the gate voltage is changed. These features are…

Condensed Matter · Physics 2007-05-23 Oded Agam

We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the…

Building upon earlier work on the relation between the dimensionless interdot channel conductance g and the fractional Coulomb-blockade peak splitting f for two electrostatically equivalent dots, we calculate the leading correction that…

Mesoscale and Nanoscale Physics · Physics 2009-10-28 John M. Golden , Bertrand I. Halperin

The uniquely characteristic macrostructures of binary hydrogen-clathrate compounds $M$H$_\textrm{n}$ formed at high pressure, a cage of hydrogens surrounding a central-atom host, is theoretically predicted in various studies to include…

Superconductivity · Physics 2020-06-22 Dale R. Harshman , Anthony T. Fiory

Conductance spectra measurements of highly transparent ramp-type junctions made of superconducting $La_{2-x}Sr_{x}CuO_4$ electrodes and non superconducting $La_{1.65}Sr_{0.35}CuO_4$ barrier are reported. At low temperatures below $T_c$,…

Superconductivity · Physics 2015-05-20 Gad Koren , Tal Kirzhner

We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 V. C. Chan , D. R. McCamey , T. M. Buehler , A. J. Ferguson , D. J. Reilly , A. S. Dzurak , R. G. Clark , C. Yang , D. N. Jamieson