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We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the…

We theoretically investigate the magnitude and range of the photon-mediated interaction between two quantum dots embedded in a photonic crystal waveguide, including fabrication disorder both in the crystal and in the dot positioning. We…

Mesoscale and Nanoscale Physics · Physics 2013-08-20 Momchil Minkov , Vincenzo Savona

We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium…

Mesoscale and Nanoscale Physics · Physics 2021-07-15 V. Ryzhii , M. Ryzhii , V. Mitin , M. S. Shur , T. Otsuji

As an attempt to further elucidate the operating voltage increase in InGaN-based light-emitting diodes (LEDs), the radiative and nonradiative current components are separately analyzed in combination with the Shockley diode equation.…

Applied Physics · Physics 2017-05-24 Dong-Pyo Han , Jong-In Shim , Dong-Soo Shin

We study the injection current response tensor (also known as circular photogalvanic effect or ballistic current) in ferrolectric monolayer GeS, GeSe, SnS, and SnSe. We find that the injection current is perpendicular to the spontaneous…

Mesoscale and Nanoscale Physics · Physics 2019-11-20 Suman Raj Panday , Salvador Barraza-Lopez , Tonatiuh Rangel , Benjamin M. Fregoso

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence…

Mesoscale and Nanoscale Physics · Physics 2015-06-12 V. Perebeinos , J. Tersoff , Ph. Avouris

We develop a hydrodynamic theory of charge and heat currents induced by traveling waves, such as surface acoustic waves, in graphene devices near charge neutrality. The currents depend on the intrinsic conductivity and viscosity of the…

Mesoscale and Nanoscale Physics · Physics 2026-02-25 E. Kirkinis , A. Levchenko , A. V. Andreev

The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…

Materials Science · Physics 2016-08-04 Yanhui Huang , Linda. S. Schadler

A qualitative model describing the "anomalous" features of the conductivity of polymer nanocomposites, in particular, switching to the conducting state in relatively thick (tens of microns or more) of flexible PVC films is considered. In…

Soft Condensed Matter · Physics 2013-02-26 D. V. Vlasov , L. A. Apresyan

We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic…

Mesoscale and Nanoscale Physics · Physics 2017-12-20 Pawan Kumar Srivastava , Swasti Arya , Santosh Kumar , Subhasis Ghosh

The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge…

Materials Science · Physics 2009-11-11 P. Van Dorpe , W. Van Roy , J. De Boeck , G. Borghs , P. Sankowski , P. Kacman , J. A. Majewski , T. Dietl

A relationship is derived between differences in electric polarization between bands and the "shift vector" that controls part of a material's bulk photocurrent, then demonstrated in several models. Electric polarization has a quantized…

Mesoscale and Nanoscale Physics · Physics 2017-08-21 Benjamin M. Fregoso , Takahiro Morimoto , Joel E. Moore

We review recent work on resonant Andreev tunneling through a strongly interacting quantum dot connected to a normal and to a superconducting lead. We derive a general expression for the current flowing in the structure and discuss the…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 R. Raimondi , P. Schwab

The global electronic properties of solid-state devices are strongly affected by the microscopic spatial paths of charge carriers. Visualising these paths in novel devices produced by scalable processes would provide a quality assessment…

Polarization dependence of opto-mechanical behavior of monodomain photochromic glassy liquid crystal (LC) polymers under polarized ultraviolet light (PUV) is studied. Trans-cis photo-isomerization is generally known to be most intense at…

Soft Condensed Matter · Physics 2016-05-12 Chen Xuan , Changwei Xu , Yongzhong Huo

We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both…

We study the interplay of polaronic effect and superconductivity in transport through molecular Josephson junctions. The tunneling rates of electrons are dominated by vibronic replicas of the superconducting gap, which show up as prominent…

Mesoscale and Nanoscale Physics · Physics 2012-07-12 B. H. Wu , J. C. Cao , C. Timm

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage $V_\text{for}$ is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total…

Applied Physics · Physics 2022-02-11 Cheng-Han Ho , James S. Speck , Claude Weisbuch , Yuh-Renn Wu

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 S. Bala Kumar , Gyungseon Seol , Jing Guo

The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…

Other Condensed Matter · Physics 2008-03-26 Mike W. Denhoff
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