Related papers: Zn-related deep centers in wurtzite GaN

This work explores the Zn vacancy in ZnO using hybrid density functional theory calculations. The Zn vacancy is predicted to be an exceedingly deep polaronic acceptor that can bind a localized hole on each of the four nearest-neighbor O…

We have performed density functional theory (DFT) calculations to characterize the energetics, and the atomic and electronic structure, of stacking faults in GaN, both in the stable hexagonal wurtzite (wz) phase and in the metastable cubic…

Using the linear response theory, the vibrational and dielectric properties are calculated for c-BN, w-BN and h-BN. Calculations of the zone-center optical-mode frequencies (including LO-TO splittings) are reported. All optic modes are…

We propose the concept of a terahertz (THz) uncooled bolometer based on n-type and p-type graphene layers (GLs), constituting the absorbing regions, connected by an array of undoped graphene nanoribbons (GNRs). The GLs absorb the THz…

We present JADES JWST/NIRSpec spectroscopy of GN-z11, the most luminous candidate $z>10$ Lyman break galaxy in the GOODS-North field with $M_{UV}=-21.5$. We derive a redshift of $z=10.603$ (lower than previous determinations) based on…

Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent shows two threshold energies, one at 1.624 eV and the other…

In the past, high-z AGNs were given a minor role as possible drivers of reionization, despite initial evidences in favor of their large space densities at low luminosities by Chandra and HST. Recent observations from JWST are finding…

In this paper we report structural and optical properties of Magnesium substituted Zinc Oxide (Zn1-xMgxO) nanocrystals (~10-12nm) synthesized by low temperature route. In the low temperature synthesis route it was possible to reach x = 0.17…

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first-principles hybrid density functional study of the structure,…

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…

GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position…

Soft-X-ray emission and absorption spectroscopies with their elemental specificity are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications…

Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…

Excitonic absorption, reflection and photoluminescence spectra of mixed Zn(P_{1-x}As_{x})_{2}crystals over the full range of x (0 < x < 1) and Zn_{1-x}Cd_{x}P_{2} crystals at 0 < x < 0.05 have been studied at low temperatures (1.8 K). The…

Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap bowing and tunable room-temperature photoluminescence from the UV to the green spectral regions. However, the atomistic details of the incorporation of Sb…

The dispersion of the dielectric function for wurtzite InN is analytically evaluated in the region near the fundamental energy gap. The real part of the dielectric function has a logarithmic singularity at the absorption edge. This results…

This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…

Broadband visible light emitting, three-dimensional hexagonal annular microstructures with InGaN/GaN multiple quantum wells (MQWs) are fabricated via selective-area epitaxial growth. The single hexagonal annular structure is composed of not…

Using ab initio methods based on the density functional theory, we investigate the segregation and formation energies for various dopants (Si, Be, Zn, Sn), commonly used to obtain p- or ntype conductivity in GaAs and InAs nanowires. The…

High-resolution soft X-ray emission and absorption spectra near the N K-edge of wurtzite GaN are presented. The experimental data are interpreted in terms of band structure based full-potential electronic structure calculations. The…