Related papers: A Field Effect Transitor based on the Mott Transit…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as…
We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a…
Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor…
The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky…
Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…
Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the…
A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…
Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…
For a strongly correlated material, VO2, near a critical on-site Coulomb energy U/Uc=1, the abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT is observed by inducing internal optical phonon-coupled holes…
Topology is a key ingredient driving the emergence of quantum devices. Topological field-effect transistor (TFET) has been proposed to outperform the conventional FET by replacing the ON state with topology-protected quantized conductance,…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
We consider the Bose-Hubbard model on a two-leg ladder under an artificial magnetic field, and investigate the superfluid-to-Mott insulator transition in this setting. Recently, this system has been experimentally realized [M.Atala…
Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical…
The magnetic field-induced superconductor-insulator-metal transition (SIMT) in partially deuterated $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br, which is just on the Mott boundary, has been observed using the infrared magneto-optical imaging…
The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…
We propose a simple analytical model of a metal-oxide-semiconductor field-effect transistor with a lateral resonant gate based on the coupled electromechanical equations, which are self-consistently solved in time. All charge densities…
We present ultra-high-resolution dilatometric studies in magnetic fields on a quasi-two-dimensional organic conductor $\kappa$-(D8-BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br, which is located close to the Mott metal-insulator (MI) transition. The…
Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…