Related papers: Experimental Evidence for a Coulomb Gap in Two Dim…
We have performed a photoemission study of Ti$_{4}$O$_{7}$ around its two transition temperatures so as to cover the metallic, high-temperature insulating (bipolaron-liquid), and low-temperature insulating (bipolaron-crystal) phases. While…
The great practical utility has motivated extensive efforts to discover ultra-low resistance electrical conductors and superconductors in ambience. Here we report the observation of vanishingly small electrical resistance at the ambient…
We find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels…
We investigate bulk superconductivity in a high-quality single crystal of Bi$_2$Pd ($\beta$-Bi$_2$Pd, space group; I4/mmm) at temperatures less than 5.4 K by exploring its electrical resistivity, magnetic susceptibility, and specific heat.…
We report measurements of the Coulomb-blockade current in resistively isolated (R_{Isol} >> h/e^{2}) tunnel junctions for the temperature range 60mK $We report measurements of the Coulomb-blockade current in resistively isolated…
We have studied the temperature dependence of diagonal conductivity in high-mobility two-dimensional samples at filling factors $\nu=1/2$ and 3/2 at low temperatures. We observe a logarithmic dependence on temperature, from our lowest…
We investigate the behavior of heat conduction in two-dimensional (2D) electron gases without and with a magnetic field. We perform simulations with the Multi-Particle-Collision approach, suitably adapted to account for the Lorenz force…
We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the $T^{2}$ dependence of the drag to be independent of layer spacing and correlated with…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
We report the results of our investigations on a polycrystalline sample of Lu$_2$Ir$_3$Si$_5$ which crystallizes in the U$_2$Co$_3$Si$_5$ type structure (Ibam). These investigations comprise powder X-ray diffraction, magnetic…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
Coulomb drag between two unhybridized graphene sheets separated by a dielectric spacer has recently attracted considerable theoretical interest. We first review, for the sake of completeness, the main analytical results which have been…
We develop a Boltzmann-Langevin description of Coulomb drag effect in clean double-layer systems with large interlayer separation $d$ as compared to the average interelectron distance $\lambda_F$. Coulomb drag arises from density…
An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated…
We consider a two-dimensional electron system with Coulomb interaction between particles at a finite temperature T. We show that the dynamic Kohn anomaly in the response function at 2K_F leads to a linear-in-T correction to the spin…
Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…
We consider effects of Coulomb interaction in a granular normal metal at not very low temperatures suppressing weak localization effects. In this limit calculations with the initial electron Hamiltonian are reduced to integrations over a…
We study variable range hopping in the quantum Hall effect regime in the presence of a metallic gate parallel to the plane of a two-dimensional electron gas. Screening of the Coulomb interaction by the gate causes the partial ``filling'' of…
Access to lower temperatures has consistently enabled scientific breakthroughs. Pushing the limits of \emph{on-chip} temperatures deep into the microkelvin regime would open the door to unprecedented quantum coherence, novel quantum states…