Related papers: A Graphene Field-Effect Device
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations…
In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate…
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only…
The realization of optoelectronic devices on paper has been an outstanding challenge due to the large surface roughness and incompatible nature of paper with optical materials. Here, we demonstrate a new class of optoelectronic devices on a…
Using full-potential density functional calculations we have investigated the structural and electronic properties of graphene and some of its structural analogues, viz., monolayer (ML) of SiC, GeC, BN, AlN, GaN, ZnO, ZnS and ZnSe. While…
We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…
The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman…
Graphene covered metal nanoparticles constitute a novel type of hybrid materials, which provide a unique platform to study plasmonic effects, surface-enhanced Raman scattering (SERS), and metal-graphene interactions at the nanoscale. Such a…
Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…
For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types…
Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields. While theoretical works proposed the possibility of creating large-area…
A new type of field emission display(FED) based on an edge-enhance electron emission from metal-insulator-semiconductor (MIS) thin film structure is proposed. The electrons produced by an avalanche breakdown in the semiconductor near the…
Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport…
Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree,…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…
The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to…
We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…