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To understand the link between doping and electronic properties in high temperature superconductors, we report first-principles calculations on the oxygen doping effect for the single layer cuprate HgBa$_2$CuO$_{4+\delta}$. The doping…

Superconductivity · Physics 2007-05-23 P. Süle , C. Ambrosch-Draxl , H. Auer , E. Y. Sherman

We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide.…

Materials Science · Physics 2009-11-10 S. Heinze , M. Radosavljevic , J. Tersoff , Ph. Avouris

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily…

We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is…

Mesoscale and Nanoscale Physics · Physics 2014-03-18 Aron W. Cummings , François Léonard

Nitrogen doping of the carbon is an important method to improve the performance and durability of catalysts for proton exchange membrane fuel cells by platinum-nitrogen and carbon-nitrogen bonds. This study shows that p-phenyl groups and…

In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect transistors by PDI-8CN2. We show that an accumulation heterojunction is formed at the interface between the organic semiconductors and that the…

Materials Science · Physics 2015-06-12 L. Aversa , R. Verucchi , R. Tatti , F. V. Di Girolamo , M. Barra , F. Ciccullo , A. Cassinese , S. Iannotta

Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…

Phosphorene is a promising single elemental two-dimensional layered semiconductor with huge potential for future nanoelectronics and spintronics applications. In this work, we investigated the effect of an organic molecule (benzene) in the…

Mesoscale and Nanoscale Physics · Physics 2019-07-09 A. Chaudhury , S. Majumder , S. J. Ray

Electronic properties of metallic and semiconducting carbon nanotubes are investigated in presence of magnetic field perpendicular to the CN-axis, and disorder introduced through energy site randomness. The magnetic field field is shown to…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Stephan Roche , Riichiro Saito

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by…

Superconducting transition temperature (Tc) reported in SnAs-based layered compound NaSn$_2$As$_2$ varies from 1.2 to 1.6 K, implying that its superconductivity is critically sensitive to non-stoichiometry. Here, we demonstrate that…

Recent reports reveal that isothermal chemical doping of hydrogen in correlated complex oxides such as perovskite nickelates (e.g. NdNiO3) can induce a metal-to-insulator transition (MIT) without the need for temperature modulation. In this…

Materials Science · Physics 2024-05-16 Ronald Warzoha , Brian Donovan , Yifei Sun , Elena Cimpoiasu , Shriram Ramanathan

The n-type tensile-strained Ge can be used as high-efficient light-emitting materials. To reveal the influence of n-type doping on the electronic structure of Ge, we have computed the electronic structure of P, As and Sb doped Ge using…

Materials Science · Physics 2017-06-14 Zhong-Hua Dai , Yao-Ping Xie , Yi-Chen Qian , Li-Juan Hu , Xiao-Di Li , Hai-Tao Ma

High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an…

We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser doping technique used, Gas Immersion Laser Doping, we…

Materials Science · Physics 2015-06-23 F. Chiodi , A. D. Chepelianskii , C. Gardes , G. Hallais , D. Bouchier , D. Débarre

We study theoretically, two doped Carbon nanotubes connected via a chemically active bond as the basic elementary gate for a recent proposal for qubit teleportation in the solid--state. We show that such a system provides the necessary…

Other Condensed Matter · Physics 2007-05-23 Abraham O. Alaka

We combine ab initio density functional theory with transport calculations to provide a microscopic basis for distinguishing between good and poor metal contacts to nanotubes. Comparing Ti and Pd as examples of different contact metals, we…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 N. Nemec , D. Tomanek , G. Cuniberti

We analyze fulleride superconductivity at experimental doping levels, treating the electron-electron and electron-phonon interactions on an equal footing, and establish the existence of novel physics which helps explain the unusually high…

Strongly Correlated Electrons · Physics 2007-05-23 J. E. Han , O. Gunnarsson , V. H. Crespi

Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been…

Mesoscale and Nanoscale Physics · Physics 2010-05-03 Thomas Mueller , Megumi Kinoshita , Mathias Steiner , Vasili Perebeinos , Ageeth A. Bol , Damon B. Farmer , Phaedon Avouris

Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric…

Materials Science · Physics 2010-07-27 Maria S. Hammer , Carsten Deibel , Jens Pflaum , Vladimir Dyakonov