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Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10^9…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Zhen Yao , Charles L. Kane , Cees Dekker

We report on the interplay of localized and extended degrees of freedom in the metallic state of high-temperature superconductors in a multiband setting. Various ways in which the bare magnetic response may become incommensurate are…

Strongly Correlated Electrons · Physics 2015-12-01 G. Nikšić , I. Kupčić , O. S. Barišić , D. K. Sunko , S. Barišić

The doping and temperature dependent conductivity of electron-doped cuprates is analysed. The variation of kinetic energy with doping is shown to imply that the materials are approximately as strongly correlated as the hole-doped materials.…

Strongly Correlated Electrons · Physics 2015-01-09 A. J. Millis , A. Zimmers , R. P. S. M. Lobo , N. Bontemps

Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor…

Strongly Correlated Electrons · Physics 2007-05-23 H. Kempa , P. Esquinazi

In organic electronics, conductivity doping is used primarily to eliminate charge injection barriers in organic light-emitting diodes, organic photovoltaics and other electronic devices. Therefore, research on conductivity doping is…

Materials Science · Physics 2025-05-15 Artem Fediai , Franz Symalla , Tobias Neumann , Wolfgang Wenzel

We study the hydrogen effect on the electronic, magnetic and optical properties of Cu$_2$O in presence of different dopants (Na, Li and Ti). The electronic properties calculations show that hydrogen changes the conductivity of Cu$_2$O from…

Materials Science · Physics 2019-06-28 A. Larabi , A. Mahmoudi , M. Mebarki , M. Dergal

Electron properties of Carbon nanotubes can change qualitatively in a transverse electric field. In metallic tubes the sign of Fermi velocity can be reversed in a sufficiently strong field, while in semiconducting tubes the effective mass…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 D. S. Novikov , L. S. Levitov

Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals…

An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…

Strongly Correlated Electrons · Physics 2012-08-02 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

By systematic chemical substitution of Pt and Ni in the newly-discovered superconductor Nb$_2$PdS$_5$ ($T_c\sim$6 K), we study the evolution of its superconducting properties with doping, focussing on the behavior of the upper critical…

Superconductivity · Physics 2015-06-23 N. Zhou , Xiaofeng Xu , J. R. Wang , J. H. Yang , Y. K. Li , Y. Guo , W. Z. Yang , C. Q. Niu , Bin Chen , Chao Cao , Jianhui Dai

In this letter, we demonstrate a strong dependence of the electrostatic deformation of doubly-clamped single-walled carbon nanotubes on both the field strength and the tube length, using molecular simulations. Metallic nanotubes are found…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 Zhao Wang , Laetitia Philippe

The structural and electronic properties of fluorine (F)-doped BN nanotubes (BNNTs) are studied using density functional methods. Our results indicate that F atoms prefer to substitute N atoms, resulting in substantial changes of BN layers.…

Materials Science · Physics 2007-05-23 H. J. Xiang , Jinlong Yang , J. G. Hou , Qingshi Zhu

We examined doping effect of 3d transition metal elements (TM: Cr, Mn, Co, Ni, and Cu) at the Fe site of a quaternary fluoroarsenide CaFeAsF, an analogue of 1111-type parent compound LaFeAsO. The anomaly at ~120 K observed in resistivity…

Density functional methods have been used to calculate the electronic properties of aligned smalldiameter single-walled carbon nanotubes under hydrostatic pressures. Abrupt pressure induced semiconductor-metal and metal-semiconductor…

Materials Science · Physics 2008-08-27 Sumit Saxena , Trevor A. Tyson

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

Strongly Correlated Electrons · Physics 2015-06-25 Subroto Mukerjee , J. E. Moore

Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode…

Instrumentation and Detectors · Physics 2016-05-04 M. Hufschmidt , E. Fretwurst , E. Garutti , R. Klanner , I. Kopsalis , J. Schwandt

Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film…

Superconductivity · Physics 2012-05-01 Takayoshi Katase , Soshi Iimura , Hidenori Hiramatsu , Toshio Kamiya , Hideo Hosono

Insights to the mechanism of CdSe nanoparticle attachment to carbon nanotubes following the hot injection method are discussed. It was observed that the presence of water improves the nanotube coverage while Cl containing media are…

Materials Science · Physics 2015-07-20 Beatriz H. Juarez , Michaela Meyns , Alina Chanaewa , Yuxue Cai , Christian Klinke , Horst Weller

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but…

Materials Science · Physics 2016-12-13 Dirk König , Daniel Hiller , Sebastian Gutsch , Margit Zacharias , Sean Smith

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is…

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