Related papers: Spin blockade at semiconductor/ferromagnet junctio…
Intrinsic spin currents are encountered in noncentrosymmetric crystals without any external electric fields; these currents are caused by spin-orbit interaction. In this paper, various theoretical aspects of this phenomenon in bulk…
The long-range spin-triplet supercurrent transport is an interesting phenomenon in the superconductor/ferromagnet ($S/F$) heterostructure containing noncollinear magnetic domains. Here we study the long-range superharmonic Josephson current…
We interpret a recent pioneering experiment [Zgirski M. et al., Phys. Rev. Lett., 106 (2011) 257003] on quasiparticle manipulation in a superconducting break junction in terms of spin blockade drawing analogy with spin qubits. We propose a…
We study spin and charge diffusion in metallic-ferromagnet/topological-insulator junctions. The coupled diffusion equations are derived perturbatively with respect to the strength of the interlayer tunneling. We calculate spin accumulation…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
SHORTENED ABSTRACT: We study numerically the properties of spin- and charge-transport in a nanoscale diffusive superconductor$\mid$ferromagnet$\mid$superconductor junction when the magnetization texture is non-uniform. Specifically, we…
The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the…
A model describing spin-polarized current via discrete energy levels of a metallic nanoparticle, which has strongly asymmetric tunnel contacts to two ferromagnetic leads, is presented. In absence of spin-relaxation, the model leads to a…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
We study fluctuations of spin-polarized currents in a three-terminal spin-valve system consisting of a diffusive normal metal wire connected by tunnel junctions to three ferromagnetic terminals. Based on a spin-dependent Boltzmann-Langevin…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
One of the most fundamental properties of electromagnetism and special relativity is the coupling between the spin of an electron and its orbital motion. This is at the origin of the fine structure in atoms, the spin Hall effect in…
A system exhibiting multiple simultaneously broken symmetries offers the opportunity to influence physical phenomena such as tunneling currents by means of external control parameters. Time-reversal symmetry and inversion symmetry are both…
We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the…
Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based…
We present tight-binding calculations of the spin torque in non-collinear magnetic tunnel junctions based on the non-equilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach…
Spin-split superconductors exhibit an electron-hole asymmetric spin-resolved density of states, but the symmetry is restored upon averaging over spin. On the other hand, asymmetry appears again in tunneling junctions of spin-split…
Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations…