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A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…

Mesoscale and Nanoscale Physics · Physics 2012-02-21 Theodore Choi , Thomas Ihn , Silke Schön , Klaus Ensslin

Compact and reliable sources of non-classical light could find many applications in emerging technologies such as quantum cryptography, quantum imaging and also in fundamental tests of quantum physics. Single self-assembled quantum dots…

Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…

Materials Science · Physics 2021-11-23 Ali Jaffal , Philippe Regreny , Gilles Patriarche , Michel Gendry , Nicolas Chauvin

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…

Mesoscale and Nanoscale Physics · Physics 2010-07-15 B. Alén , D. Fuster , Y. González , L. González , J. Martínez-Pastor , M. U. González , J. M. García

For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based…

We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…

Mesoscale and Nanoscale Physics · Physics 2012-02-21 C. Hermannstädter , N. A. Jahan , J. -H. Huh , H. Sasakura , K. Akahane , M. Sasaki , I. Suemune

III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs…

We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an…

We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for…

Mesoscale and Nanoscale Physics · Physics 2018-08-29 Alexis Fiset-Cyr , Dan Dalacu , Sofiane Haffouz , Philip J. Poole , Jean Lapointe , Geof C. Aers , Robin L. William

We study a single-level quantum dot strongly coupled to a superconducting lead and tunnel-coupled to a normal electrode which can exchange energy with a single-mode resonator. We show that a such system can sustain lasing characterized by a…

Mesoscale and Nanoscale Physics · Physics 2019-09-04 Gianluca Rastelli , Michele Governale

Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…

Mesoscale and Nanoscale Physics · Physics 2012-07-20 A. N. Vamivakas , Y. Zhao , S. Falt , A. Badolato , J. M. Taylor , M. Atature

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 M. Wiesner , W. -M. Schulz , C. Kessler , M. Reischle , R. Rossbach , M. Jetter , P. Michler

The superconducting nanowire single-photon detector (SNSPD) is a quantum-limit superconducting optical detector based on the Cooper-pair breaking effect by a single photon, which exhibits a higher detection efficiency, lower dark count…

Instrumentation and Detectors · Physics 2020-06-02 Lixing You

We consider an effective mass model for an electron-hole pair in a simplified confinement potential, which is applicable to both a nanoscopic self-assembled semiconducting InAs ring and a quantum dot. The linear optical susceptibility,…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Hui Hu , Guang-Ming Zhang , Jia-Lin Zhu , Jia-Jiong Xiong

Quantum dots embedded in semiconductor photonic nanowires (NW-QDs) can deterministically produce single-photons and entangled photon pairs at high repetition rates. These photons can be efficiently coupled from the photonic nanowire into…

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present…

Mesoscale and Nanoscale Physics · Physics 2023-08-10 Chang-Min Lee , Mustafa Atabey Buyukkaya , Shahriar Aghaeimeibodi , Christopher J. K. Richardson , Edo Waks

The realization of long-distance quantum communication and the envisioned quantum internet relies on coherent hybrid light-matter interfaces connecting quantum light emitters with quantum memory (QM) systems. Unlike probabilistic photon…

We demonstrate an elastically-tunable self-assembled quantum dot in a nanowire antenna that emits single photons with resolution-limited spectral linewidths. The single-photon device is comprised of a single quantum dot embedded in a…

Mesoscale and Nanoscale Physics · Physics 2016-01-11 P. E. Kremer , A. C. Dada , P. Kumar , Y. Ma , S. Kumar , E. Clarke , B. D. Gerardot

Gated InGaAs/InP avalanche photodiodes are the most practical device for detection of telecom single photons arriving at regular intervals.Here, we report the development of a compact single-photon detector (SPD) module measured just 8.8cm…

Instrumentation and Detectors · Physics 2024-01-08 Yan Zhengyu , Shi Tingting , Fan Yuanbin , Zhou Lai , Yuan Zhiliang

Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis,…

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