Related papers: Single quantum dot nanowire LEDs
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
We report the routing of quantum light emitted by self-assembled InGaAs quantum dots (QDs) into the optical modes of a GaAs ridge waveguide and its efficient detection on-chip via evanescent coupling to NbN superconducting nanowire single…
We present a quantum optics theory, numerical calculations, and experiments on coupled quantumdots in semiconductor nanowire waveguides. We first present an analytical Green function theory tocompute the emitted spectra of two coupled…
Lithium-Niobate-On-Insulator (LNOI) is emerging as a promising platform for integrated quantum photonic technologies because of its high second-order nonlinearity and compact waveguide footprint. Importantly, LNOI allows for creating…
Quantum states of light play a pivotal role in modern science[1] and future photonic applications[2]. While impressive progress has been made in their generation and manipulation with high fidelities, the common table-top approach is…
The prospect of using light to probe or manipulate quantum materials has become an active area of interest. Here, we investigate a quantum wire -- treated as a finite-sized one-dimensional electron gas -- that is coupled to a single…
Semiconductor based photonic information technologies are rapidly being pushed to the quantum limit where non-classical states of light can be generated, manipulated and exploited in prototypical quantum optical circuits. Here, we report…
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…
We report on the enhancement of the spontaneous emission in the visible red spectral range from site-controlled InP/GaInP quantum dots by resonant coupling to Tammplasmon modes confined beneath gold disks in a hybrid metal/semiconductor…
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and…
We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth…
Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters…
Surface acoustic waves (SAWs) are a powerful tool for controlling a wide range of quantum systems, particularly quantum dots (QDs) via their oscillating strain fields. The resulting energy modulation of these single photon sources can be…
Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g.,…
We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high…
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…
Superconducting nanowire single photon detectors (SNSPDs) offer high-quantum-efficiency and low-dark-count-rate single photon detection. In a growing number of cases, large magnetic fields are being incorporated into quantum microscopes,…