Related papers: Local Hall effect in hybrid ferromagnetic/semicond…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak…
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…
A semiclassical theory for magnetotrasport in a quantum Hall system near filling factor $\nu = 1/2 $ based on the Composite Fermions physical picture is used to analyze the effect of local flattening of the Composite Fermion Fermi surface…
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the…
Screening of an external random potential by a two dimensional (2D) Fermi liquid may be strongly dependent on the degree of its polarization. This is considered as a possible mechanism for the observed strong magnetoresistance of the 2D…
We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in…
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic…
Temperature-dependence and magnetic field-dependence of the Hall effect and the magnetic property in manganese-oxide thin films are studied. The spontaneous magnetization and the Hall resistivity are obtained for a various of magnetic…
We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
We consider magnetotransport in a disordered two-dimensional electron gas in the presence of a periodic modulation in one direction. Existing quasiclassical and quantum approaches to this problem account for Weiss oscillations in the…
General thermodynamical arguments are used to relate the Hall current to the part of the magnetic moment originated in "macroscopic current loops". The Hall resistance is found to depend only on the electron properties in the vicinity of…
The resistance of a metal in a magnetic field can be very illuminating about its ground state. Some famous examples include the integer and fractional quantum Hall effects\cite{Klitzing-QHE,Tsui-FQHE}, Shubnikov-de Haas…
Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite…
We studied low temperature (T=50mK) in-plane magnetoresistance of a dilute two-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits an apparent metal-insulator transition. We found an anisotropic magnetoresistance, which…
The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic…
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the…
Motivated by recent experiments on the observation of room temperature skyrmions in a layered heterostructure and subsequent demonstration of topological Hall effect in the same system, we have studied a minimal model of itinerant electrons…
The measured Hall angle in a ferromagnetic nanomagnet shows a substantial non-linear dependence on an external magnetic field, which cannot be explained by adopted mechanisms of the Ordinary and Anomalous (AHE) Hall effects implying a…