Related papers: Size-dependent fine-structure splitting in self-or…
The spin structure and spin dynamics of excitons in an ensemble of (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both direct and indirect band gap dots, are studied. Time-resolved and spectral selective techniques…
Degeneracy of the bright single exciton spin state is a prerequisite for the production of triggered polarization-entangled photon pairs from the biexciton decay of a quantum dot. Normally, however, the exciton spin states are split due to…
In this work we investigate the electronic and optical properties of self-assembled InN/GaN quantum dots. The one-particle states of the low-dimensional heterostructures are provided by a tight-binding model that fully includes the wurtzite…
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…
In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…
We study the size-dependent exciton fine structure in monolayer black phosphorus quantum dots (BPQDs) deposited on different substrates (isolated, Si and SiO$_2$) using a combination of tight-binding method to calculate the single-particle…
Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian.…
I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding…
Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the…
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed…
We use an atomistic model to consider the effect of shape symmetry breaking on the optical properties of self-assembled InAs/GaAs quantum dots. In particular, we investigate the energy level structure and optical activity of the lowest…
We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable…
We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is…
Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence…
A method for the calculation of the electronic structure of pyramidal self-assembled InAs/GaAs quantum dots is presented. The method is based on exploiting the exact $\bar{C}_{4}$ symmetry of the 8-band $k\cdot p$ Hamiltonian with the…
A theoretical investigation is presented of the statistics of excitons in quantum dots (QDs) of different sizes. A formalism is developed to build the exciton creation operator in a dot from the single exciton wavefunction and it is shown…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
The spin-flip rate that couples dark and bright excitons in self-assembled quantum dots is obtained from time-resolved spontaneous emission measurements in a modified local density of optical states. Employing this technique, we can…
Nanowire quantum dots, i.e., heterostructures consisting of an axial insertion of low bandgap semiconductor within large band gap semiconductor nanowire, attract interest due to their emerging applications in the field of quantum…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…