Related papers: Size-dependent fine-structure splitting in self-or…
Exciton fine structure splitting in semiconductors reflects the underlying symmetry of the crystal and quantum confinement. Since the latter factor strongly enhances the exchange interaction, most work has focused on nanostructures. Here,…
We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are…
A detailed understanding of the population and coherence dynamics in optically driven individual emitters in solids and their signatures in ultrafast nonlinear-optical signals is of prime importance for their applications in future quantum…
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy,…
We perform spatial point analysis of InAs quantum dot nucleation sites and surface reconstruction domain pattern on an InAs wetting layer, giving insights for quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5 monolayers…
The effect of Gamma-X mixing on the energy levels fine structure of indirect in k-space excitons in an ensemble of (In,Al)As/AlAs quantum dots with type I band alignment was experimentally studied. Using the methods of optical spin…
In this chapter quantum many body theoretical methods have been used to study properties of GaAs - and InAs - based, small semiconductor compound quantum dots (QDs) containing manganese or vanadium atoms. Interest to such systems has grown…
We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment,…
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…
The neutral biexciton cascade of single quantum dots is a promising source of entangled photon pairs. The character of the entangled state is determined by the energy difference between the excitonic eigenstates known as fine-structure…
In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al2O3 layer during magnetron sputtering deposition of a Ge+Al2O3 mixture at an elevated substrate temperature. The self-assembly…
A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $\mu$m (around 0.8 eV photon energy) is…
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based…
The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with…
We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation…
We present numerical investigations based on the Luttinger-Kohn four-band $k \cdot p$ theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under…
We employ the quantum-jump approach to study single scatterings in single semiconductor quantum dots. Two prototypical situations are investigated. First, we analyze two-photon emissions from the cascade biexciton decay of a dot where the…
Excitons in alloyed nanowire quantum dots have unique spectra as shown here using atomistic calculations. The bright exciton splitting is triggered solely by alloying and despite cylindrical quantum dot shape reaches over $15~\mu$eV,…
In this work, the effect of size and wetting layer on subband electronic envelop functions, eigenenergies, linear and nonlinear absorption coefficients and refractive indices of a dome-shaped InAs/GaAs quantum dot were investigated. In our…
The appearance of the non-homogeneous structures of the indirect exciton density distribution in the region of the quantum well (in the region of the inner ring) is explained. The structure (the fragmentation) occurs due to the exciton…