Related papers: The Shockley-type boundary conditions for semicond…
The current-voltage p-n junction characteristics were mainly analyzed until now at low injection levels and high level injection separately. This work unifies the low injection, medium injection, high injection levels and the ohmic region…
We have derived new boundary conditions on wave function at the normal metal / superconductor (NS) interface beyond effective mass approximation. These conditions are based on tight-binding approach and enable one to formulate quantitative…
The interplay between spin and charge transport in electrically and magnetically inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory of spin-polarized bipolar transport in magnetic p-n junctions is…
In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of…
The quasiclassical theory of superconductivity provides a methodology to study emergent phenomena in hybrid structures comprised of superconductors interfaced with other materials. A key component in this theory is the boundary condition…
Stochastic boundary conditions for interactions with a particle reservoir are discussed in many-particle systems. We introduce the boundary conditions with the injection rate and the momentum distribution of particles coming from a particle…
An analysis is made of the conditions for ohmic contacts realization in the case of Schottky contacts. Based on the classical notions about the mechanisms of current flow, we consider the generalized model of Schottky contact that takes…
The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…
By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection-barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic…
Scanning photocurrent microscopy (SPCM) has been widely used for characterizing charge transport properties, in particular, the minority carrier diffusion length of semiconductors. However, studying lightly doped or intrinsic semiconductors…
Design-oriented boundary conditions for subharmonic oscillations are of great interest recently. Based on a subharmonic oscillation boundary condition reported in a PhD thesis more than a decade ago, extended new boundary conditions are…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
The phenomenological boundary conditions for the envelope wave function, which is applicable for contacts of semiconductors with the rather different crystal symmetry are proposed. It is shown that the boundary conditions are determined by…
The modeling of finite-extent semiconductor nanostructures that are embedded in a host material requires the numerical treatment of the boundary in a finite simulation domain. For the study of a self-assembled InAs dot embedded in GaAs,…
A junction between an n- and p-type semiconductor results in the creation of a depletion region whose properties are at the basis of nowadays electronics. If realized using topological insulators as constituent materials, p-n junctions are…
The zero-energy bound states at the edges or vortex cores of chiral p-wave superconductors should behave like majorana fermions. We introduce a model Hamiltonian that describes the tunnelling process when electrons are injected into such…
I derive a general set of boundary conditions for quasiclassical transport theory of metals and superconductors that is valid for equilibrium and non-equilibrium situations and includes multi-band systems, weakly and strongly spin-polarized…
Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant…
Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization…
A new DC-SQUID is proposed that exploits the properties of the grain boundary junctions in high T_c superconductors. The orientations of the grain boundaries are chosen in such a way to establish a pi/2 (rather than 0 or pi) phase…