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Related papers: Phosphorus donors in highly strained silicon

200 papers

Mono- and multilayer FeSe thin films grown on SrTiO$_\mathrm{3}$ and BiTiO$_\mathrm{3}$ substrates exhibit a greatly enhanced superconductivity over that found in bulk FeSe. A number of proposals have been advanced for the mechanism of this…

Superconductivity · Physics 2016-05-04 Y. Wang , K. Nakatsukasa , L. Rademaker , T. Berlijn , S. Johnston

The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 K. M. Borysenko , J. T. Mullen , E. A. Barry , S. Paul , Y. G. Semenov , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

We present a microscopic theory of proximity effect in the ferromagnet/superconductor/ferromagnet (F/S/F) nanostructures where S is s-wave low-T_c superconductor and F's are layers of 3d transition ferromagnetic metal. Our approach is based…

Superconductivity · Physics 2016-08-31 A. Bagrets , C. Lacroix , A. Vedyayev

Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when…

Materials Science · Physics 2021-07-14 Y. W. Sun , D. Holec , D. Gehringer , L. Li , O. Fenwick , D. J. Dunstan , C. J. Humphreys

Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and…

Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although…

Mesoscale and Nanoscale Physics · Physics 2020-12-29 Philipp Ross , Brendon C. Rose , Cheuk C. Lo , Mike L. W. Thewalt , Alexei M. Tyryshkin , Stephen A. Lyon , John J. L. Morton

Density Functional Theory (DFT) calculations not only allow to predict the vibrational and optical properties of solids but also to understand and disentangle the mechanisms playing a key role in the generation of coherent optical phonons.…

Materials Science · Physics 2025-10-09 A. Levchuk , R. Busselez , G. Vaudel , P. Ruello , V. Juvé , B. Arnaud

Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer…

Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal…

Materials Science · Physics 2012-10-10 P. A. Mortemousque , T. Sekiguchi , C. Culan , M. P. Vlasenko , R. G. Elliman , L. S. Vlasenko , K. M. Itoh

Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well…

We study the optical and electrical properties of silver films with a graded thickness obtained through metallic evaporation in vacuum on a tilted substrate to evaluate their use as semitransparent electrical contacts. We measure their…

To explore the potential of molecular gas treatment of freshly cut lithium foils in non-electrolyte based passivation of high energy-density Li anodes, density functional theory (DFT) has been used to study the decomposition of molecular…

Materials Science · Physics 2015-06-01 Stephan L. Koch , Benjamin J. Morgan , Stefano Passerini , Gilberto Teobaldi

To understand sparse systems we must account for both strong local atom bonds and weak nonlocal van der Waals forces between atoms separated by empty space. A fully nonlocal functional form [H. Rydberg, B.I. Lundqvist, D.C. Langreth, and M.…

Materials Science · Physics 2009-11-10 H. Rydberg , M. Dion , N. Jacobson , E. Schroder , P. Hyldgaard , S. I. Simak , D. C. Langreth , B. I. Lundqvist

Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high…

We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance…

Mesoscale and Nanoscale Physics · Physics 2008-01-09 Troels Markussen , Riccardo Rurali , Antti-Pekka Jauho , Mads Brandbyge

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric…

Instrumentation and Methods for Astrophysics · Physics 2023-08-09 M. Lisovenko , Z. Pan , P. S. Barry , T. Cecil , C. L. Chang , R. Gualtieri , J. Li , V. Novosad , G. Wang , V. Yefremenko

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically…

Materials Science · Physics 2010-02-02 Felix Hoehne , Hans Huebl , Bastian Galler , Martin Stutzmann , Martin S. Brandt

We experimentally demonstrate a method for obtaining nuclear spin hyperpolarization, that is, polarization significantly in excess of that expected for a thermal equilibrium. By exploiting a modified Overhauser process, we obtain more than…

Materials Science · Physics 2009-02-26 D. R. McCamey , J. van Tol , G. W. Morley , C. Boehme

We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also…

Materials Science · Physics 2009-11-10 L. M. Kettle , H. -S. Goan , Sean C. Smith , L. C. L. Hollenberg , C. J. Wellard

Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on…

Materials Science · Physics 2007-05-23 A. Ferretti , M. Fanciulli , A. Ponti , A. Schweiger