Related papers: Phosphorus donors in highly strained silicon
Based on a modified Ising model in a transverse field we demonstrate that defect layers in ferroelectric thin films, such as layers with impurities, vacancies or dislocations, are able to induce a strong increase or decrease of the…
Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by…
We study theoretically the structural and electronic response of layered bulk black phosphorus to in-layer strain. Ab initio density functional theory (DFT) calculations reveal that the strain energy and interlayer spacing display a strong…
The Hohenberg-Kohn theorem of density functional theory (DFT) for the case of electrons interacting with an external magnetic field (that couples to spin only) is examined in more detail than previously. A unexpected generalization is…
Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin…
Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is…
The hyperfine interactions at the uranium site in the antiferromagnetic USb2 compound were calculated within the density functional theory (DFT) employing augmented plane wave plus local orbital (APW+lo) method. We investigated the…
A comprehensive model of high-concentration phosphorus diffusion has been developed and simulation of phosphorus diffusion from a constant source (phosphosilicate glass) at a temperature of 890 Celsius degrees for 14.25 min. has been…
Several SrTiO3 (STO) thin films without electrodes processed by pulsed laser deposition, of thicknesses down to 40 nm, were studied using infrared transmission and reflection spectroscopy. The complex dielectric responses of polar phonon…
We demonstrate that the dynamic nuclear polarization (DNP) of phosphorus donors in silicon can be very effective in a magnetic field of 4.6 T and at temperatures below 1 K. The DNP occurs due to the Overhauser effect following a cross…
First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while…
Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…
The Josephson effect in superconductor / diffusive ferromagnet / superconductor (SFS) junctions is studied using the recursive Green function method in the regime of large exchange energy in a ferromagnet. Motivated by recent experiment [R.…
We report on the realization of silicon nitride membranes with enhanced and electrically tunable reflectivity. A subwavelength one-dimensional grating is directly patterned on a suspended 200 nm-thick, high stress commercial film using…
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with…
We note the existence of a set of magnetic field values where a simple Hahn echo sequence refocuses the dynamics of the full dipolar interaction, for spin systems of electron donors in silicon. As the refocussing occurs for both arbitrary…
Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more resemblance with bulk graphite than monolayer graphene. In…
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of…
The ability to precisely control the electronic coupling/decoupling of adsorbates from surfaces is an essential goal. It isimportant for fundamental studies not only in surface science but alsoin several applied domains including, for…
Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…