Related papers: Spin accumulation probed in multiterminal lateral …
A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on…
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…
We consider theoretically transport in a spinfull one-channel interacting quantum wire placed in an external magnetic field. For the case of two point-like impurities embedded in the wire, under a small voltage bias the spin-polarized…
The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect,…
We consider a 2D ballistic and quasi-ballistic structures with spin-orbit-related splitting of the electron spectrum. The ballistic region is attached to the leads with a voltage applied between them. We calculate the edge spin density…
An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or…
We study spin-resolved probability distributions for electrons in a multichannel waveguide in the presence of a spin-orbit interaction. For a spin-polarized electron injection, a zitterbewegung pattern is predicted in the probability…
Low-symmetry two-dimensional (2D) topological materials such as MoTe$_2$ host efficient charge-to-spin conversion (CSC) mechanisms that can be harnessed for novel electronic and spintronic devices. However, the nature of the various CSC…
We demonstrate the injection and detection of electrically and thermally generated spin currents probed in Co$_2$MnSi/Cu lateral spin valves. Devices with different electrode separations are patterned to measure the non-local signal as a…
We propose a scalable and practical implementation of spin amplification which does not require individual addressing nor a specially tailored spin network. We have demonstrated a gain of 140 in a solid-state nuclear spin system of which…
Spin-rotation coupling, which is responsible for angular momentum conversion between the electron spin and rotational deformations of elastic media, is exploited for generating spin current. This method requires neither magnetic moments nor…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
Detection and manipulation of electrons' spins are key prerequisites for spin-based electronics or spintronics. This is usually achieved by contacting ferromagnets with metals or semiconductors, in which the relaxation of spins due to…
The non-equilibrium spin accumulation in ferromagnetic double barrier junctions is shown to govern the transport in small structures. Transport properties of such systems are described by a generalization of the theory of the Coulomb…
We study spin and charge diffusion in metallic-ferromagnet/topological-insulator junctions. The coupled diffusion equations are derived perturbatively with respect to the strength of the interlayer tunneling. We calculate spin accumulation…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…
Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant…
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…
We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to…