Related papers: Spin accumulation probed in multiterminal lateral …
The time dependence of muon spin relaxation has been measured in high purity aluminum and silver samples in a longitudinal 2 T magnetic field at room temperature, using time-differential \musr. For times greater than 10 ns, the shape fits…
We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been…
We study spin polarization induced by locally injected electric currents in a metal whose spin--orbit coupling reflects its structural chirality. We reveal both spin polarization in the bulk in the linear response and antiparallel spin…
We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling…
Long spin relaxation times are a prerequisite for the use of spins in data storage or nanospintronics technologies. An atomic-scale solid-state realization of such a system is the spin of a transition metal atom adsorbed on a suitable…
Local charge and spin currents are evaluated from the solutions of fully relativistic quantum mechanical scattering calculations for systems that include temperature-induced lattice and spin disorder as well as intrinsic alloy disorder.…
A theoretical formulation for spin transport through an antiferromagnetic (AF) insulator is presented in the case driven/detected by direct/inverse spin Hall effect in two heavy metal contacts. The spin signal is shown to be transferred by…
The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip,…
The spin Nernst effect is a phenomenon in which the spin current flows perpendicular to a temperature gradient. Similar to the spin Hall effect, this phenomenon also causes spin accumulation at the boundaries. Here, we study the spin…
We use quantum mechanical scattering calculations implemented in a basis of tight-binding muffin-tin orbitals to calculate nonequilibrium spin and orbital currents in transition metals with a view to understanding the length scale on which…
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin…
The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is…
When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium…
We consider a hole-doped semiconductor with a sharp boundary and study the boundary spin accumulation in response to a charge current. First, we solve exactly a single-particle quantum mechanics problem described by the isotropic Luttinger…
An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charge-spin conversion. We measure the influence of these…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…
Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate…
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a…
Spin waves in magnetic insulators are low-damping signal carriers that could enable a new generation of spintronic devices. The excitation, control, and detection of spin waves by metal electrodes is crucial for interfacing these devices to…