Related papers: Time resolved measurements on low-density single q…
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs…
We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we…
Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton…
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the…
We report correlation and cross-correlation measurements of photons emitted under continuous wave excitation by a single II-VI quantum dot (QD) grown by molecular-beam epitaxy. A standard technique of microphotoluminescence combined with an…
We present the results of a detailed time resolved luminescence study carried out on a very high quality InGaAs quantum well sample where the contributions at the energy of the exciton and at the band edge can be clearly separated. We…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector…
We report on high-resolution photoluminescence (PL) spectroscopic and microscopic study of laterally coupled InAs/GaAs self-assembled quantum dots by using a low-temperature near-field scanning optical microscope. We have observed slightly…
Using time correlated single photon counting combined with temperature dependent diffraction limited confocal photoluminescence spectroscopy we accurately determine, for the first time, the intrinsic radiative lifetime of single excitons…
This work presents epitaxial growth and optical spectroscopy of CdTe quantum dots (QDs) in (Cd,Zn,Mg)Te barriers placed on the top of (Cd,Zn,Mg)Te distributed Bragg reflector. The formed photonic mode in our half-cavity structure permits to…
Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence…
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K…
We report the routing of quantum light emitted by self-assembled InGaAs quantum dots (QDs) into the optical modes of a GaAs ridge waveguide and its efficient detection on-chip via evanescent coupling to NbN superconducting nanowire single…
Photoemission from a single self-organized GaAs/AlGaAs quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the…
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to…
Quantum dots acting as single photon emitters in the blue-green range are fabricated and characterized at cryogenic temperature. They consist in CdSe dots inserted in (Zn,Mg)Se nanowires with a thick shell. Photoluminescence spectra, decay…
Multiexcitons (MXs) in quantum dots (QDs) manifest many body interactions under quantum confinement. Beyond this fundamental interest, MXs are of importance in numerous optoelectronic applications including QD lasing, light emitting diodes…
We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…