Related papers: Single Electron Transport in electrically tunable …
We study peculiarities of transport through a Coulomb blockade system tuned to the vicinity of the spin transition in its ground state. Such transitions can be induced in practice by application of a magnetic field. Tunneling of electrons…
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…
Dots are ideal systems to study fundamentals on heat transfer at the nanoscale and promising nanoscale heat-engines and thermal devices. Here, we report on the validation of our theoretical model on the thermal conductance of a metallic dot…
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified…
We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in nanoelectromechanical single-electron transistor (NEM-SET). It is shown that the mechanical motion of the central island (a small metallic…
We investigate how the electron-vibron coupling influences electron transport via an anisotropic magnetic molecule, such as a single-molecule magnet (SMM) Fe$_4$, by using a model Hamiltonian with parameter values obtained from…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length…
Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron…
We present a theory of a single-electron transistor exchange-coupled to a localized spin. We show how to gain detailed quantitative knowledge about the attached spin such as spin size, exchange coupling strength, Land\'e g-factor, and spin…
We present a theory of spin, electronic and transport properties of a few-electron lateral triangular triple quantum dot molecule in a magnetic field. Our theory is based on a generalization of a Hubbard model and the Linear Combination of…
Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…
We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the…
We explore theoretically the spin transport in nanostructures consisting of a gold quantum dot bridging nonmagnetic electrodes and two Mn12-Ph single molecule magnets (SMMs) that are thiol-bonded to the dot but are not in direct contact…
We consider transport through a single-molecule magnet strongly coupled to metallic electrodes. We demonstrate that for half-integer spin of the molecule electron- and spin-tunneling \emph{cooperate} to produce both quantum tunneling of the…
Spintronics devices rely on spin-dependent transport behavior evoked by the presence of spin-polarized electrons. Transport through nanostructures, on the other hand, is dominated by strong Coulomb interaction. We study a model system in…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
An electron transport is studied in the system which consists of scanning tunneling microscopy-single molecule magnet-metal. Due to quantum tunneling of magnetization in single-molecule magnet, linear response conductance exhibits stepwise…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…