Related papers: MgB2 tunnel junctions with native or thermal oxide…
High energy milling of MgB2 pre-reacted powder renders the material largely amorphous through extreme mechanical deformation and is suitable for mechanically alloying MgB2 with dopants including carbon. Bulk samples of milled C and MgB2…
We have fabricated a series of iron-sheathed superconducting wires prepared by the powder-in-tube technique from (MgB_2)_{1-x}:(Mg+2B)_x initial powder mixtures taken with different proportions, so that x varies from 0 to 1. It turned out…
The new superconductor MgB2 may prove useful for microwave applications at intermediate temperatures. MgB2 films with the thickness of 300 - 400 nm have surface resistance Rs less than 0.01 mOhms at a frequency (f) of 8.5 GHz and 7 K,and ~…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
Several theoretical analyses of the two superconducting energy gaps of magnesium diboride, $\Delta_\pi$ and $\Delta_\sigma$, predict substructures within each energy gap, rather than two pure numbers. Recent experiments have revealed…
We report the effect of annealing on the superconductivity of MgB2 thin films as functions of the postannealing temperature in the range from 700 C to 950 C and of the postannealing time in the range from 30 min to 120 min. On annealing at…
Upper critical fields of four MgB2 thin films were measured up to 28 Tesla at Grenoble High Magnetic Field Laboratory. The films were grown by Pulsed Laser Deposition and showed critical temperatures ranging between 29.5 and 38.8 K and…
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…
Considerable excitement has been caused recently by the discovery that the binary boride system with stoichiometry MgB2 is superconducting at the remarkably high temperature of 39 K (1). This potentially opens the way to even higher Tc…
Using low-temperature scanning laser microscopy we directly image electric transport in a magnetoresistive element, a manganite thin film intersected by a grain boundary (GB). Imaging at variable temperature allows reconstruction and…
Oxygen was systematically incorporated in MBE grown MgB2 films using in-situ post-growth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature and resistivity indicate that…
Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counter electrode. The preparation conditions were optimized with respect to magnetic and…
The ongoing search for high voltage positive electrode materials for Mg batteries has been primarily hampered by poor Mg mobility in bulk oxide frameworks. Motivated by the presence of Mo$_3$ clusters that can facilitate charge…
Conventional electron beam lithography has been used to fabricate mesoscopic Nb wires with a superconducting transition temperature above 7.0 K. The typical line width and the thickness were 200 nm and 45 nm respectively. Nb was deposited…
We have grown MgB2 films in a postannealing process. Precursors were prepared on Al2O3(0001) substrates by codeposition of Mg and MgB2 using pulsed laser deposition technique. Superconducting MgB2 thin films were obtained via an ex situ…
We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of…
We studied the voltage and temperature dependency of the dynamic conductance of normal metal-MgB2 junctions obtained either with the point-contact technique (with Au and Pt tips) or by making Ag-paint spots on the surface of high-quality…
We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of…
We study the electrical transport of vertically-stacked Josephson tunnel junctions using GdBa$_2$Cu$_3$O$_{7-d}$ electrodes and a BaTiO$_3$ barrier with thicknesses between 1 nm and 3 nm. The junctions with an area of 20 mm x 20 mm were…
We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low…