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Related papers: Electronic properties of silica nanowires

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Density functional theory and molecular dynamics simulations have been used to optimize the structure of nanowires of SiO2. The starting structures were based on b-cristobalite, orthotridymite, b-tridymite, and rutile crystals. The analysis…

Materials Science · Physics 2012-08-02 José I. Martínez , Federico Calle-Vallejo , Clifford M. Krowne , Julio A. Alonso

We performed an {\it ab initio} investigation on the properties of rutile tin oxide (SnO$_{x}$) nanowires. We computed the wire properties determining the equilibrium geometries, binding energies and electronic band structures for several…

Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched…

Mesoscale and Nanoscale Physics · Physics 2013-11-18 Ümit Keleş , Bartosz Liedke , Karl-Heinz Heinig , Ceyhun Bulutay

Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current…

Materials Science · Physics 2011-02-17 Jun Yao , Lin Zhong , Douglas Natelson , James M. Tour

The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…

In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those of bulk silicon. These wires can be…

Mesoscale and Nanoscale Physics · Physics 2019-10-22 Riccardo Rurali

The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular dynamics. The surface relaxation led to surface…

The inherent network of nanopores and voids in silicon dioxide (SiO2) is generally undesirable for aspects of film quality, electrical insulation and dielectric performance. However, if we view these pores as natural nano-patterns embedded…

Electronic structures of SiC nanoribbons have been studied by spin-polarized density functional calculations. The armchair nanoribbons are nonmagnetic semiconductor, while the zigzag nanoribbons are magnetic metal. The spin polarization in…

Materials Science · Physics 2009-11-13 Lian Sun , Yafei Li , Zhenyu Li , Qunxiang Li , 1 Zhen Zhou , Zhongfang Chen , Jinlong Yang , J. G. Hou

We present a first-principles study of the electronic properties of silicon clathrate nanowires intercalated with various types of alkali or alkaline-earth atoms. We find that the band structure of the nanowires can be tuned by varying the…

Materials Science · Physics 2009-11-11 S. Sirichantaropass , V. M. García-Suárez , C. J. Lambert

Isolated oxygen impurities and fully oxidized structures of four stable two-dimensional (2D) SiS structures are investigated by {\em ab initio} density functional calculations. Binding energies of oxygen impurities for all the four 2D SiS…

Materials Science · Physics 2019-04-23 Zhengnan Li , Shuai Dong , Jie Guan

Silicon has long been synonymous with semiconductor technology. This unique role is due largely to the remarkable properties of the Si-SiO_2 interface, especially the (001)-oriented interface used in most devices. Although Si is crystalline…

Materials Science · Physics 2009-10-31 Yuhai Tu , J. Tersoff

The stability and electronic structure of a single monatomic Al wire has been studied using the ab initio pseudopotential method. The Al wire undergoes two structural rearrangements under compression, i.e., zigzag configurations at angles…

Materials Science · Physics 2015-06-24 Jin-Cheng Zheng , Hui-Qiong Wang , A. T. S. Wee , C. H. A. Huan

Parameters determining the performance of the crystalline oxides zirconia (ZrO_2) and hafnia (HfO_2) as gate insulators in nanometric Si electronics are estimated via ab initio calculations of the energetics, dielectric properties, and band…

Materials Science · Physics 2009-11-07 V. Fiorentini , G. Gulleri

The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of…

Materials Science · Physics 2017-09-07 Y. G. Fedorenko

Electronic band structure and energetic stability of two types of and oriented silicon nanowires in beta-Sn phase with the surface terminated by hydrogen atoms were studied using density functional theory. It was found that beta-Sn…

Materials Science · Physics 2015-05-13 Pavel B. Sorokin , Pavel V. Avramov , Viktor A. Demin , Leonid A. Chernozatonskii

We performed an extensive first-principles study of nanowires in various pentagonal structures by using pseudopotential plane wave method within the density functional theory. Our results show that nanowires of different types of elements,…

Materials Science · Physics 2009-11-07 Prasenjit Sen , O. Gulseren , T. Yildirim , Inder P. Batra , S. Ciraci

We have carried out first principles electronic structure and total energy calculations for a series of ultrathin aluminum nanowires, based on structures obtained by relaxing the model wires of Gulseren et al. The number of conducting…

Condensed Matter · Physics 2009-10-31 F. Di Tolla , A. Dal Corso , J. A. Torres , E. Tosatti

Unusual physical properties of single-wall carbon nanotubes have started a search for similar tubular structures of other elements. In this paper, we present a theoretical analysis of single-wall nanotubes of silicon and group III-V…

Materials Science · Physics 2009-11-11 E. Durgun , S. Tongay , S. Ciraci

The structural, elastic, and electronic properties of the very recently discovered ternary silicide superconductor, Li2IrSi3, have been calculated using ab-initio technique. We have carried out the plane-wave pseudopotential approach within…

Superconductivity · Physics 2015-05-12 M. A. Hadi , M. A. Alam , M. Roknuzzaman , M. T. Nasir , A. K. M. A. Islam , S. H. Naqib
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