Related papers: Carrier Dynamics in Submonolayer InGaAs/GaAs Quant…
Monolayers of Transition Metal Dichalcogenides (TMDs) are atomically thin two-dimensional crystals with attractive optoelectronic properties, which are promising for emerging applications in nanophotonics. Here, we report on the…
Monolayer and multilayer MoS$_2$ are extremely fascinating materials for the use in lasers, compact optical parametric amplifiers, and high-power detectors which demands high excitation light-matter interaction. Consequently, it is…
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However,…
In order to study the response of the quantum chromodynamic matter to finite electromagnetic fields, we utilize the Polyakov linear - sigma model (PLSM) in mean-field approximation. Due to participants' momentum imbalance and off-center…
Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of…
The hydrostatic pressure induced changes in the transport properties of monolayer (ML) MoS$_2$ have been investigated using first-principles density functional theory based calculations. The application of pressure induces shift in the…
A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport…
In this theoretical study, modulation techniques are developed to support the Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) mission. A CW lidar system using sine waves modulated by ML pseudo random noise codes is…
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were…
A major issue for the implementation of large scale superconducting quantum circuits is the interaction with interfacial two-level system defects (TLS) that leads to qubit relaxation and impedes qubit operation in certain frequency ranges…
We study the quantum dynamics of two quantum dots (QDs) or artificial atoms coupled through the fundamental localized plasmon of a gold nanorod resonator. We derive an intuitive and efficient time-local master equation, in which the effect…
The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) are prospective materials for quantum devices owing to their inherent 2D confinements. They also provide a platform to realize even lower-dimensional in-plane electron…
Telecom wavelength quantum dots (QDs) are emerging as a promising solution for generating deterministic single photons compatible with existing fiber optic infrastructure. Emission in the low loss C band minimizes transmission losses,…
A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as…
The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites…
We investigate the influence of X-ray and gamma-ray irradiation on the photophysical properties of sub-monolayer CdTe/CdS quantum dots (QDs) immobilized in porous silica (PSiO2) scaffolds. The highly luminescent QD-PSiO2 thin films allow…