Related papers: Carrier Dynamics in Submonolayer InGaAs/GaAs Quant…

Sub-1-nm gate length $MoS_2$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the sub-1-nm gate length monolayer (ML) $MoS_2$ transistors…

We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K).…

The MLLA single inclusive distribution inside one high energy (gluon) jet at small x is estimated by the steepest descent method. Its analytical expression is obtained outside the "limiting spectrum". It is then used to evaluate 2-particle…

The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally,…

The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…

Monolayer semiconducting transition metal dichalcogenides (S-TMDs) have been extensively studied as materials for next-generation optoelectronic devices due to their direct band gap and high exciton binding energy at room temperature. Under…

Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with increasing QW depth (x). Time-resolved differential…

We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable…

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum…

III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs…

We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…

Lateral quantum dot molecules consist of at least two closely-spaced InGaAs quantum dots arranged such that the axis connecting the quantum dots is perpendicular to the growth direction. These quantum dot complexes are called molecules…

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at…

For highly efficient ultrathin solar cells, layered indium selenide (InSe), a van der Waals solid, has shown a great promise. In this paper, we study the coherent dynamics of charge carriers generation in {\gamma}-InSe single crystals. We…

A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a…

Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and…

We analyzed the localized charge dynamics in the system of $N$ interacting single-level quantum dots (QDs) coupled to the continuous spectrum states in the presence of Coulomb interaction between electrons within the dots. Different dots…

We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental…

Double quantum dots (DQDs) have emerged as versatile and efficient absorbing light devices owing to their more multiple adjusting parameters than the single QD's. Using the system-reservoir theory, tunneling effect on the quantum…

Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate…