Related papers: Spin tunneling through an indirect barrier
A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive…
Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
The Coulomb gap observed in tunneling between parallel two-dimensional electron systems, each at half filling of the lowest Landau level, is found to depend sensitively on the presence of an in-plane magnetic field. Especially at low…
We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the…
We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a…
Hartman effect for spin waves tunnelling through a barrier in a thin magnetic film is considered theoretically. The barrier is assumed to be created by a locally increased magnetic anisotropy field. The considerations are focused on a…
The spin-dependent elastic reflection of quasi two-dimensional electrons from a lateral impenetrable barrier in the presence of band-structure spin-orbit coupling results in a spin angular impulse exerted on the electrons which is…
We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…
Tunnelling density of states in the vicinity of Fermi level of a two-dimensional electron gas subjected to an external parallel and zeroth magnetic field is calculated. It reveals a pseudo-gap recently observed in the experiments. The gap…
Temporally varying electromagnetic media have been extensively investigated recently to unveil new means for controlling light. However, spin-dependent phenomena in such media have not been explored thoroughly. Here, we reveal the existence…
We study beyond-mean-field properties of interacting spin-1 Bose gases with synthetic Rashba-Dresselhaus spin-orbit coupling at low energies. We derive a many-body Hamiltonian following a tight-binding approximation in quasi-momentum space,…
Based on spin-charge coupled drift-diffusion equations, which are derived from kinetic equations for the spin-density matrix in a rigorous manner, the electric-field-induced nonequilibrium spin polarization is treated for a two-dimensional…
Spin-dependent partial conductances are evaluated in a tight-binding description of electron transport in the presence of spin-orbit (SO) couplings, using transfer-matrix methods. As the magnitude of SO interactions increases, the…
Non-equilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schr\"odinger equation for electron tunneling in the presence…
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source…
In this note, we show that the latest spin grating measurement of spin helix by Koralek {\em et al.} [Nature {\bf 458}, 610 (2009)] provides strong evidence of the infinite spin diffusion length of any spin polarization along the direction…
Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange…
Through solution of the multielectron, semi-relativistic, time-dependent Schr\"{o}dinger equation, we show that angular streaking produces strongly spin-polarized electrons in a noble gas. The degree of spin polarization increases with the…
We present calculations of the frequency-dependent spin susceptibility tensor of a two-dimensional electron gas with competing Rashba and Dresselhaus spin-orbit interaction. It is shown that the interplay between both types of spin-orbit…