Related papers: Electrostatic- and Parallel Magnetic Field- Tuned …
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
Electrical magnetoresistance and tunnel diode oscillator measurements were performed under external magnetic fields up to 41 T applied along the crystallographic b-axis (hard axis) of UTe$_2$ as a function of temperature and applied…
We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic doping using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a…
Our measurements of the low frequency ac conductivity in strongly disordered two-dimensional films near the magnetic field-tuned superconductor-to-insulator transition show a sudden drop in the phase stiffness of superconducting order with…
We investigate the magnetic field evolution of the superconducting state in a strongly disordered NbN thin film which exhibits a magnetic field tuned superconductor to insulator-like transition, employing low temperature scanning tunneling…
We investigate the field tuned quantum phase transition in a 2D low-disorder amorphous InO$_x$ film in the frequency range of 0.05 to 16 GHz employing microwave spectroscopy. In the zero temperature limit, the AC data are consistent with a…
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…
Study and comparison of over 30 examples of electron doped BaFe2As2 for transition metal (TM) = Co, Ni, Cu, and (Co/Cu mixtures) have lead to an understanding that the suppression of the structural/antiferromagnetic phase transition to low…
The position of a field-tuned superconductor-insulator quantum transition occuring in disordered thin films is examined within the mean field approximation. Our calculation shows that the microscopic disorder-induced reduction of the…
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical…
The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large…
We investigate ultrathin superconducting TiN films, which are very close to the localization threshold. Perpendicular magnetic field drives the films from the superconducting to an insulating state, with very high resistance. Further…
Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the…
BaPb$_{1-x}$Bi$_x$O$_3$ is found to exhibit a field-tuned superconductor to insulator transition for Bi compositions 0.24 $\leq x \leq$ 0.29. The magnetoresistance of optimally doped samples manifests a temperature-independent crossing…
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system…
We analyze here the behavior near the 2D insulator-superconductor quantum critical point in the presence of a perpendicular magnetic field. We show that with increasing field $H$, the quantum disordered and quantum critical regimes, in…
We have studied the magnetic-field-tuned superconductivity destroying quantum transition in amorphous In-O films with the onset of superconductivity in zero field at about 2 K. At temperatures down to 30 mK the critical resistance…
Electrically tuning long-range magnetic orders has been realized in two-dimensional (2D) semiconductors via electrostatic doping. On the other hand, the observations are highly diverse: the transition can be realized by either electrons or…
The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2…
The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the…