Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping

Xiang Leng; Javier Garcia-Barriocanal; Boyi Yang; Yeonbae Lee; Allen M. Goldman

Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping

Superconductivity 2011-08-02 v1 Strongly Correlated Electrons

Authors: Xiang Leng , Javier Garcia-Barriocanal , Boyi Yang , Yeonbae Lee , Allen M. Goldman

Abstract

We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic doping using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step doping mechanism for electrostatic doping was revealed. The normal resistance increased with carrier concentration on the overdoped side and the high temperature (180 K) Hall number peaked at a doping level of p $\sim$ 0.15. These anomalous behaviors suggest that there is an electronic phase transition in the Fermi surface around the optimal doping level.

Keywords

doping in semiconductors high-temperature superconductivity doped magnetic materials

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@article{arxiv.1108.0083,
  title  = {Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping},
  author = {Xiang Leng and Javier Garcia-Barriocanal and Boyi Yang and Yeonbae Lee and Allen M. Goldman},
  journal= {arXiv preprint arXiv:1108.0083},
  year   = {2011}
}

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4 pages,3 figures

Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping

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