Related papers: Electrically detected electron spin resonance in a…
The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in…
Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
We develop a theoretical basis for understanding the spin relaxation processes in Kondo lattice systems with heavy fermions as experimentally observed by electron spin resonance (ESR). The Kondo effect leads to a common energy scale that…
Electron spin resonance measurements in EuFe2As2 single crystals revealed an absorption spectrum of a single resonance with Dysonian lineshape. Above the spin-density wave transition at T_SDW = 190 K the spectra are isotropic and the spin…
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
Electron spin resonance (ESR) is usually interpreted as a single-particle phenomenon protected from the effect of many-body correlations. We show that this is not the case in a two-dimensional Fermi liquid (FL) with spin-orbit coupling…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…
Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface…
The phenomenon of spin resonance has had far reaching influence since its discovery nearly 70 years ago. Electron spin resonance (ESR) driven by high frequency magnetic fields has informed our understanding of quantum mechanics, and finds…
We study a scheme for electrical detection of the spin resonance (ESR) of a single electron trapped near a Field Effect Transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped electron spin cause a…
The electron spin resonance absorption spectrum of Eu^{2+} ions serves as a probe of the normal and superconducting state in Eu_{0.5}K_{0.5}Fe_2As_2. The spin-lattice relaxation rate 1/T_1^{\rm ESR} obtained from the ESR linewidth exhibits…
We consider the problem of spin relaxation in a two-dimensional electron gas (2DEG) in a perpendicular magnetic field. We assume that the spin relaxation is induced by the Rashba spin-orbit (SO) interaction, which appears due to the…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…
We report an electron spin resonance (ESR) study of the s=1/2-Heisenberg pseudo-ladder magnet CaCu2O3 in pulsed magnetic fields up to 40 T. At sub-Terahertz frequencies we observe an ESR signal originating from a small amount of…
Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long…
Electron Spin Resonance (ESR) describes a suite of techniques for characterising electronic systems, with applications in physics, materials science, chemistry, and biology. However, the requirement for large electron spin ensembles in…
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to…
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…
We report on electron spin resonance (ESR) measurements of phosphorus donors localized in a 200 square micron area below the inductive wire of a lumped element superconducting resonator. By combining quantum limited parametric amplification…