Related papers: Millisecond-range electron spin memory in singly-c…
The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show…
We study the dynamics of the spin system that consist of a positively charged II-VI semiconductor quantum dot doped with a single Cr$^+$ ion. The resonant photoluminescence (PL) of the positively charged exciton coupled with the Cr$^+$ spin…
We optically generate electron spins in semiconductors and apply an external magnetic field perpendicularly to them. Time-resolved photoluminescence measurements, pumped with a circularly polarized light, are performed to study the spin…
Spin relaxation of electrons doped in InP quantum dots was studied by means of luminescence pump-probe and Hanle measurements. Optical pumping makes spins of doped electrons to be oriented in parallel to the helicity of the circularly…
We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$\mu$m by pump-probe Faraday rotation spectroscopy.…
Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70…
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular…
We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective…
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in…
We report on optical spin pumping of modulation electrons in CdTe-based quantum wells with low intrinsic electron density (by 10^10 cm^{-2}). Under continuous wave excitation, we reach a steady state accumulated spin density of about 10^8…
We report on a single photon and spin storage device based on a semiconductor quantum dot molecule. Optically excited single electron-hole pairs are trapped within the molecule and their recombination rate is electrically controlled over…
Spin inertia measurements are a novel experimental tool to study long-time spin relaxation processes in semiconductor nanostructures. We develop a theory of the spin inertia effect for resident electrons and holes localized in quantum dots.…
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 {\mu}m are investigated by means of polarization- and time-resolved photoluminescence, as well…
Optical pump-probe techniques are used to generate and measure electron spin polarization in a gallium arsenide epilayer in which the electron spin coherence time exceeds the mode-locked laser repetition period. Resonant spin amplification…
A key to achieving ultra-long electron spin memory in quantum dots (QDs) at 0~$T$ is the polarization of the nuclei, such that the electron spin is stabilized along the nuclear magnetic field. We demonstrate that spin-polarized electrons in…
We demonstrate all optical electron spin initialization, storage and readout in a single self-assembled InGaAs quantum dot. Using a single dot charge storage device we monitor the relaxation of a single electron over long timescales…
The spin-memory effect in the GaAs / InGaAs heterostructures with $\delta$<Mn> layer in GaAs barrier have been investigated. The effect consists in spin polarization of Mn atoms due to interaction with photogenerated spin-polarized holes.…
We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The…
Experimental investigation of nuclear spin effects on the electron spin polarization in singly negatively charged InP quantum dots is reported. Pump-probe photoluminescence measurements of electron spin relaxation in the microsecond…
A description of spin Faraday rotation, Kerr rotation and ellipticity signals for single- and multi-layer ensembles of singly charged quantum dots (QDs) is developed. The microscopic theory considers both the single pump-pulse excitation…