Related papers: Silicon nanostructures embedded in superconductor …
We report on the transport properties of nanostructures made from boron-doped superconducting diamond. Starting from nanocrystalline superconducting boron-doped diamond thin films, grown by Chemical Vapor Deposition, we pattern by…
We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultra-narrow p-type…
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…
The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…
The relevant length scales for superconductivity are of the order of nanometers. By confining the superconducting condensate to such dimensions, many physical properties change substantially, and novel phenomena emerge, which are absent in…
Based on first-principles calculations we showed that superlattices of periodically repeated junctions of hydrogen saturated silicon nanowire segments having different lengths and diameters form multiple quantum well structures. The band…
Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…
Superconductivity in two-dimensional compounds is widely concerned, not only due to its application in constructing nano-superconducting devices, but also for the general scientific interests. Very recently, borophene (two-dimensional boron…
We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth…
On the basis of density functional calculations and using Bader's atom in molecule theory, this article presents quantitative microscopic analyses on the bonding properties of amorphous silicon (a-Si) which could reflect in the observable…
Elementary semiconductors are rare and attractive, especially for low-dimensional materials. Unfortunately, most of boron nanostructures were found to be metallic, despite of their typical semiconducting bulk structure. Herein, we propose a…
We report on transport properties of the topological insulator single crystal $Sb2Te3$ nanoflakes with thickness about from 7 to 50nm. A steep drop of resistance is appeared near $3K$ in the ultrathin $Sb2Te3$ nanoflakes, manifesting a…
Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible…
The causes of high-temperature superconductivity (HTSC) are still mysterious, although more than 50,000 experiments have studied this subject. The most severe test of any microscopic theory is generally considered to be its ability to…
We describe a method with which to fabricate sub-micron mechanical structures from silicon-on-insulator substrates. We believe this is the first reported method for such fabrication, and our technique allows for complex, multilayer electron…
We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas…
We describe a microfabrication process for superconducting through-silicon vias appropriate for use in superconducting qubit quantum processors. With a sloped-wall via geometry, we can use non-conformal metal deposition methods such as…
Superconductivity results from a Bose condensate of Cooper-paired electrons with a macroscopic quantum wavefunction. Dramatic effects can occur when the region of the condensate is shaped and confined to the nanometer scale. Recent progress…