Related papers: An ion-implanted silicon single-electron transisto…

When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…

We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron…

We present a linear-response theory for the thermopower of a single-electron transistor consisting of a superconducting island weakly coupled to two normal-conducting leads (NSN SET). The thermopower shows oscillations with the same…

We propose and numerically analyze novel reconfigurable logic gates using "single-electron spin transistors" (SESTs), which are single-electron transistors (SETs) with ferromagnetic electrodes and islands. The output characteristics of a…

We present a comprehensive investigation of nonequilibrium effects and self heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron may be deposited in…

A model of a superconducting tunnel junction which refrigerates a nearby metallic island without any particle exchange is presented. Heat extraction is mediated by charge fluctuations in the coupling capacitance of the two systems. The…

Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…

Theoretical studies of the tunnelling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with…

We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…

We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…

We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…

Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…

Superconducting transmon qubits based on hybrid superconductor-semiconductor Josephson junctions (gatemons) offer gate tunability, but their relaxation times remain well below those of state-of-the-art transmons, and the origin of this…

Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux…

We study the thermopower of a quantum dot weakly coupled to two reservoirs by tunnel junctions. At low temperatures the transport through the dot is suppressed by charging effects (Coulomb blockade). As a result the thermopower shows an…

We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…

We propose an accurate clocked single-spin source for ac-spintronic applications. Our device consists of a superconducting island covered by a ferromagnetic insulator layer through which it is coupled to superconducting leads.…

As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…