Related papers: An ion-implanted silicon single-electron transisto…
We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
We propose a cyclic refrigeration principle based on mesoscopic electron transport. Synchronous sequential tunnelling of electrons in a Coulomb-blockaded device, a normal metal-superconductor single-electron box, results in a cooling power…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
We discuss inherent thermometry in a Superconductor - Normal metal - Superconductor tunnel junction. In this configuration, the energy selectivity of single-particle tunneling can provide a significant electron cooling, depending on the…
We present a method to measure the critical temperature of the island of a superconducting single electron transistor. The method is based on a sharp change in the slope of the zero-bias conductance as a function of temperature. We have…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and…
Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However,…
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within…
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…
The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a…
Tunneling of single electrons has been thoroughly studied both theoretically and experimentally during last ten years. By the present time the basic physics is well understood, and creation of useful single-electron devices becomes the…
We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…
Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature is essential for practical utilization. Dopant based single-electron devices are well studied at low-temperature…