Related papers: Highly oriented VO2 thin films prepared by sol-gel…
Highly (001) oriented thin films of Co2MnSi have been grown on lattice matched GaAs(001) without a buffer layer. Stoichiometric films exhibited a saturation magnetization slightly reduced from the bulk value and films grown at the highest…
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500…
The experimental research on the nature of diffusion by the Mo substrate atoms into the Ti and Cr deposited thin films is completed by the secondary ion-ion emission method. In [1], the initial stage of the Ti thin film on the Mo substrate…
Textured VO2(011) microcrystals are grown in the monoclinic, M1 phase which undergo a reversible first order semiconductor to metal transition (SMT) accompanied by a structural phase transition to rutile tetragonal, R phase. Around the…
Transparent conducting oxides (TCOs) are essential for the optoelectronics industry, but there is a critical gap in cost-effective methods to rapidly deposit low sheet resistance, high transmittance films without damaging delicate…
Thin films of the charge-ordered (CO) compound Pr$_{0.5}$Ca$_{0.5}$MnO$_{3}$ have been deposited onto (100)-oriented SrTiO$_{3}$ substrates using the Pulsed Laser Deposition technique. Magnetization and transport properties are measured…
In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature…
We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over…
Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al2O3(0001) substrate using PLD technique. The angle dependent magnetic hysteresis, remanent coercivity and temperature…
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…
Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T semimetallic state, and from the Td Weyl semimetallic state to the…
In literature it has been reported that the gamma-phase PVDF film is formed from dimethyl sulfoxide (DMSO) solvents regardless of preparation temperature. In this report the crystallization of both alpha and gamma phase from DMSO solvent by…
$\beta-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $\beta-Ga_2O_3$ epitaxial…
Epitaxial thin films have been utilised to investigate the radiolytic dissolution of uranium dioxide interfaces. Thin films of UO$_2$ deposited on single crystal yttria stabilised zirconia substrates have been exposed to water in the…
Dynamic radiative cooling with variable emissive power is experimentally demonstrated in this study by a wavelength-selective tunable metafilm emitter, which consists of an opaque aluminum film, a sputtered silicon spacer, and a…
Ruthenium metal and its oxide stand out for their exceptional catalytic activity, stability in Oxygen Evolution Reactions (OER) and electrical conductivity, making them indispensable in electronics and electrocatalysis. In this study,…
We observe remarkably strong room temperature ferromagnetism (~1.5 Bohr Magneton/Mn) in optically transparent Mn(II)-doped indium tin oxide (ITO) films. The nanocrystalline films with average grain size 10-22 nm and thickness 150-350 nm are…
By using the pulsed-laser-ablation technique, we have successfully grown the La$_{3}$Ni$_{2}$O$_{7-\delta}$ thin films with $c$-axis orientation perpendicular to the film surface. X-ray diffraction shows that the (00l) peaks can be well…
Oblique angle deposition of oxides is being famous for fabricating inhomogeneous thin films with variation of refractive index along thickness in a functional form. Inhomogeneous layers play a key role in the development of rugate…
In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the…