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Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k^3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67.…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 L. G. Wang , Wen Yang , Kai Chang

We propose and investigate a spin-cell device which provides the necessary spin-motive force to drive a spin current for future spintronic circuits. Our spin-cell have four basic characteristics: (i) it has two poles so that a spin current…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Qing-feng Sun , Hong Guo , Jian Wang

Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be…

Materials Science · Physics 2014-04-02 F. Bottegoni , M. Celebrano , M. Bollani , P. Biagioni , G. Isella , F. Ciccacci , M. Finazzi

We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 P. S. Alekseev , M. M. Glazov , S. A. Tarasenko

Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and studied actively. For example, representative methods of spin current generation include…

Mesoscale and Nanoscale Physics · Physics 2017-06-28 Keita Hamamoto , Motohiko Ezawa , Kun Woo Kim , Takahiro Morimoto , Naoto Nagaosa

Spin transport typically relies on direct manipulation of the spin degree of freedom via magnetic fields, spin-orbit coupling, or engineered spin-dependent potentials. We show theoretically that directional spin currents can arise in a…

The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 V. I. Perel' , S. A. Tarasenko , I. N. Yassievich , S. D. Ganichev , V. V. Bel'kov , W. Prettl

Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport.…

Mesoscale and Nanoscale Physics · Physics 2011-03-02 Marius V. Costache , Sergio O. Valenzuela

The periodic flashing potential has proven to be a powerful tool for investigating directed atomic currents. By applying the flashing ring-shaped potential to spin-orbit (SO) coupled, noninteracting Bose-Einstein condensate (BEC) systems,…

Quantum Gases · Physics 2024-06-28 Zhiqiang Li , Xiaoxiao Hu , Zhao-Yun Zeng , Ai-Xi Chen , Xiaobing Luo

We have studied the spin rotation coupling(SRC) as an ingredient to explain different spin related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control…

Mesoscale and Nanoscale Physics · Physics 2013-10-31 Debashree Chowdhury , B. Basu

The all-electrical realization of highly spin-polarized charge currents and their efficient conversion into pure spin currents remains a fundamental challenge in spintronics. Here, we report a spin-axis dynamic locking (SADL) effect in…

Other Condensed Matter · Physics 2025-11-25 Lv Zhiheng , Cai Jiangtao , Ma Dengpan , Xing Yan , Liu Zhifeng

We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…

We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…

Materials Science · Physics 2009-11-11 Subodha Mishra , Sunita Thulasi , Sashi Satpathy

A directional photon-assisted resonant chiral tunneling through a bilayer graphene barrier is considered. An external electromagnetic field applied to the barrier switches the transparency $T$ in the longitudinal direction from its steady…

Other Condensed Matter · Physics 2016-11-10 S. E. Shafranjuk

Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…

Applied Physics · Physics 2024-12-11 Run-Wu Zhang , Chaoxi Cui , Runze Li , Jingyi Duan , Lei Li , Zhi-Ming Yu , Yugui Yao

In a recent paper [Phys. Rev. B 72, 153314 (2005)], the $k^{3}$-Dresselhaus term in the contacts and the full form of the current operator are considered for spin-dependent tunneling through a symmetric barrier. The authors found that the…

Mesoscale and Nanoscale Physics · Physics 2010-04-08 Titus Sandu

We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…

Mesoscale and Nanoscale Physics · Physics 2009-09-29 T. L. Hoai Nguyen , Henri-Jean Drouhin , Jean-Eric Wegrowe , Guy Fishman

Photovoltaic effect, e.g., solar cells, converts light into DC electric current. This phenomenon takes place in various setups such as in noncentrosymmetric crystals and semiconductor pn junctions. Recently, we proposed a theory for…

Strongly Correlated Electrons · Physics 2020-10-23 Masahiro Sato , Hiroaki Ishizuka

The electrical control of pure spin current remains a central challenge in spintronics, particularly in time-reversal symmetric systems composed of nonmagnetic elements, where spin and electric fields interact only indirectly. In this work,…

Mesoscale and Nanoscale Physics · Physics 2025-10-01 Yaqing Yang , Zhen Zhang , Liwen Zhang , Liantuan Xiao , Suotang Jia , Jun Chen , Lei Zhang

We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Min Shen , Semion Saikin , Ming-C. Cheng
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