Related papers: Full Counting Statistics for a Single-Electron Tra…
The interface between a heavy electron coherent metallic phase and an incoherent normal metal phase is discussed. The Fermi momentum mismatch between the two phases causes the carriers to scatter at the interface. The interface conductance…
We study a general model describing a self-detecting single electron transistor realized by a suspended carbon nanotube actuated by a nearby antenna. The main features of the device, recently observed in a number of experiments, are…
Monte Carlo simulations and an analytical approach within the framework of a semiclassical model are presented which permit the determination of Coulomb blockade and single electron charging effects for multiple tunnel junctions coupled in…
We investigate theoretically the simultaneous tunneling of two electrons from a superconductor into a normal metal at low temperatures and voltages. Such an emission process is shown to be equivalent to the Andreev reflection of an incident…
Current-voltage characteristics of a single-electron transistor with a vibrating quantum dot were calculated assuming vibrons to be in a coherent (non-equilibrium) state. For a large amplitude of quantum dot oscillations we predict strong…
We present a full theoretical and experimental study of the dynamics and energy distribution of non-equilibrium quasiparticles in superconducting tunnel junctions (STJs). STJs are often used for single-photon spectrometers, where the…
In (100)-oriented GaAs illuminated at normal incidence by a laser and its second harmonic, interference between one- and two-photon absorption results in ballistic current injection, but not modulation of the overall carrier injection rate.…
We study nonequilibrium effects in current transport through voltage biased tunnel junction with long diffusive superconducting leads at low applied voltage, $eV \ll 2\Delta$, and finite temperatures. Due to a small value of the Josephson…
Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically…
We show that an instability may be present in resonant tunneling through a quantum well in one, two and three dimensions, when the resonance lies near the emitter Fermi level. A simple semiclassical model which simulates the resonance and…
Given the intrinsic nonequilibrium nature of high-energy collisions the investigation of the dynamical properties of transport phenomena is important. The study of the real-time behavior of various conductivities and susceptibilities help…
In this work we investigate the phenomena associated with the new thresholds in the spectrum of excitations arising when different one-dimensional strongly interacting systems are voltage biased and weakly coupled by tunneling. We develop…
We have used numerical modeling and a semi-analytical calculation method to find the low frequency value S_{I}(0) of the spectral density of fluctuations of current through 1D arrays of small tunnel junctions, using the ``orthodox theory''…
We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the…
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…
A non-equilibrium theory describing the charge qubit dynamics measured by a quantum point contact is developed based on Schwinger-Keldysh's approach. Using the real-time diagram technique, we derive the master equation to all orders in…
The inductance/impedance due to thin metallic structures in non-destructive testing (NDT) is difficult to evaluate. In particular, in Finite Element Method (FEM) eddy current simulation, an extremely fine mesh is required to accurately…
We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky…
We study intrinsic noise of current in a superconducting single-electron transistor, taking into account both coherence effects and Coulomb interaction near a Cooper-pair resonance. Due to this interplay, the statistics of tunneling events…
We study the nonequilibrium transport properties of a normal-superconductor-normal structure, focussing on the effect of adding an impurity in the superconducting region. Current conservation requires the superfluid velocity to be nonzero,…