English

Shot Noise of Single-Electron Tunneling in 1D Arrays

Strongly Correlated Electrons 2009-10-31 v1

Abstract

We have used numerical modeling and a semi-analytical calculation method to find the low frequency value S_{I}(0) of the spectral density of fluctuations of current through 1D arrays of small tunnel junctions, using the ``orthodox theory'' of single-electron tunneling. In all three array types studied, at low temperature (kT << eV), increasing current induces a crossover from the Schottky value S_{I}(0)=2e<I> to the ``reduced Schottky value'' S_{I}(0)=2e<I>/N (where N is the array length) at some crossover current I_{c}. In uniform arrays over a ground plane, I_{c} is proportional to exp(-\lambda N), where 1/\lambda is the single-electron soliton length. In arrays without a ground plane, I_{c} decreases slowly with both N and \lambda. Finally, we have calculated the statistics of I_{c} for ensembles of arrays with random background charges. The standard deviation of I_{c} from the ensemble average <I_{c}> is quite large, typically between 0.5 and 0.7 of <I_{c}>, while the dependence of <I_{c}> on N or \lambda is so weak that it is hidden within the random fluctuations of the crossover current.

Keywords

Cite

@article{arxiv.cond-mat/9801219,
  title  = {Shot Noise of Single-Electron Tunneling in 1D Arrays},
  author = {K. A. Matsuoka and K. K. Likharev},
  journal= {arXiv preprint arXiv:cond-mat/9801219},
  year   = {2009}
}

Comments

RevTex. 21 pages of text, 10 postscript figures