Related papers: Full Counting Statistics for a Single-Electron Tra…
The carrier generation in insulators subjected to strong electric fields is characterized by the Landau-Zener formula for the tunneling probability with a nonperturbative exponent. Despite its long history with diverse applications and…
Several models of thermionic energy nanoconverters have been proposed to study the transport phenomena that take place in electronic devices. For example, in resonant tunneling junctions those phenomena are manifested through the…
We investigate the nonequilibrium transport properties of a double quantum dot system connected in parallel to two leads, including intradot electron-electron interaction. In the absence of interactions the system supports a bound state in…
We develop a field theory formalism for the disordered interacting electron liquid in the dynamical Keldysh formulation. This formalism is an alternative to the previously used replica technique. In addition it naturally allows for the…
We analyze electron transport through relatively short coherent conductors in the presence of Coulomb interaction. We evaluate the current-voltage characteristics of such conductors taking into account the effect of an external environment.…
We investigate measurement of electron transport in quantum dot systems by using single-electron transistor as a noninvasive detector. It is demonstrated that such a detector can operate in the ``negative-result measurement'' regime. In…
We present a quaternion inspired formalism specifically developed to evaluate the intensity of the electrical current that traverses a single molecule connected to two semi-infinite electrodes as the applied external bias is varied. The…
We analyze current fluctuations in mesoscopic coherent conductors in the presence of electron-electron interactions. In a wide range of parameters we obtain explicit universal dependencies of the current noise on temperature, voltage and…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
It is shown, with citing tunnel junction as an example, that mutual interplay of electron quantum transfers in a conducting system can be the fast mechanism for generation fundamental low-frequency flicker conductance fluctuations (1/f…
We revisit the problem of point-contact tunnel junctions involving one-dimensional superconductors and present a simple scheme for computing the full current-voltage characteristics within the framework of the non-equilibrium Keldysh Green…
We present an analysis of transport properties of a system consisting of two half-infinite interacting one-dimensional wires connected to a single fermionic site, the energy of which is subject to a periodic time modulation. Using the…
Using the persistent current I induced by an Aharonov-Bohm flux in square lattices with random potentials, we study the interplay between electronic correlations and disorder upon the ground state (GS) of a few polarized electrons (spinless…
In order to fully characterize the noise associated with electron transport, with its severe consequences for solid-state quantum information systems, the theory of full counting statistics has been developed. It accounts for correlation…
Electron transport in nonideal quantum wells (QW) with large-scale variations of energy levels is studied when two subbands are occupied. Although the mean fluctuations of these two levels are screened by the in-plane redistribution of…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
We formulate a general path integral approach which describes statistics of current fluctuations in mesoscopic coherent conductors at arbitrary frequencies and in the presence of interactions. Applying this approach to the non-interacting…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…
Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on the magnitude of the current that is achievable in such…
A fourth-order Schr\"{o}dinger equation for the description of charge transport in semiconductors in the ballistic regime is proposed with the inclusion of non-parabolic effects in the dispersion relation in order to go beyond the simple…