Related papers: Molecular states in a one-electron double quantum …
We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a…
We theoretically investigate the spectrum of a single electron double quantum dot, defined by top gates in a graphene with a substrate induced gap. We examine the effects of electric and magnetic fields on the spectrum of localized states,…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs is researched. The problem is…
Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
We investigate the transport properties of two strongly coupled ballistic one-dimensional (1D) wires, defined by a split-gate structure deposited on a GaAs/AlGaAs double quantum well. Matching the widths and electron densities of the two…
We use charge sensing to detect entropy changes in a double quantum dot defined by electrostatic gating of a GaAs/AlGaAs heterostructure. This system can be tuned to be two separate systems, like two independent, artificial atoms, or a…
Pulsed electrostatic gating combined with capacitive charge sensing is used to perform excited state spectroscopy of an electrically isolated double-quantum-dot system. The tunneling rate of a single charge moving between the two dots is…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
We study the spectrum and the transport properties of two identical, vertically coupled quantum dots in a perpendicular magnetic field. We find correlation-induced energy crossings in a magnetic field sweep between states differing only in…
The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate…
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes…
We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
We theoretically investigate transport signatures of quantum interference in highly symmetric double quantum dots in a parallel geometry and demonstrate that extremely weak symmetry-breaking effects can have a dramatic influence on the…
We study a new system in which electrons in two dimensions are confined by a non homogeneous magnetic field. The system consists of a heterostructure with on top of it a superconducting disk. We show that in this system electrons can be…
We perform an exact spherical geometry finite-size diagonalization calculation for the fractional quantum Hall ground state in three different experimentally relevant GaAs-Al_{x}Ga_{1-x}As systems: a wide parabolic quantum well, a narrow…
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…
We have investigated the transport characteristics of an electron pump consisting of an asymmetric double quantum dot at zero bias voltage which is subject to electromagnetic radiation. Depending on the energies of the intermediate states…