Related papers: Growth kinetics effects on self-assembled InAs/InP…
Segregation of group-III elements during the molecular-beam epitaxy growth of III-V compounds leads to a non-abrupt interface. The composition asymmetry in the structures such as quantum wells, quantum dots, and superlattices, in turn,…
The study investigates and compares the impact of intense, non-diffractive, non-resonant structured laser beams with various intensity profiles on the properties of InAs/GaAs cylindrical quantum dot. The comparative study demon-strates that…
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450{\deg}C). We find that the presence of droplets on the growth surface…
We explore the measurement problem in the entropic dynamics approach to quantum theory. The dual modes of quantum evolution---either continuous unitary evolution or abrupt wave function collapse during measurement---are unified by virtue of…
Highly coherent quantum emitters operating in the telecommunication C-band (1530 - 1565nm), where ultra-low-loss fibers and photonic circuits are available, are crucial to the development of scalable quantum technologies. In this work, we…
Beams injected into a linear focusing channel typically have some degree of space-charge nonuniformity. In general, injected particle distributions with systematic charge nonuniformities are not equilibria of the focusing channel and launch…
A continuum model for growth of solids is developed, considering adatom deposition, surface diffusion, and configuration dependent incorporation rate. For amorphous solids it is related to surface energy densities. The high adatom density…
A comprehensive study of the exchange interaction between charge carriers in self-organized InAs/GaAs quantum dots is presented. Single quantum-dot cathodoluminescence spectra of quantum dots of different sizes are analyzed. Special…
High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interaction, and their compatibility with in-situ-deposited…
Kinetics of separation between the low and high density phases in a single component Lennard-Jones model has been studied via molecular dynamics simulations, at a very low temperature, in the space dimension $d=2$. For densities close to…
Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These…
In this study, a comprehensive view of a model crystal formation in a complex fluctuating medium is presented. The model incorporates Gaussian curvature effects at the crystal boundary as well as the possibility for superdiffusive motion…
For the development of porous materials with improved transport properties, a key missing ingredient is to determine the relations between growth kinetics, structure, and transport parameters. Here, we address these relations by studying…
Continuum simulations of self-organized lateral compositional modulation growth in InAs/AlAs short-period superlattices on InP substrate are presented. Results of the simulations correspond quantitatively to the results of synchrotron x-ray…
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…
Modeling the spontaneous evolution of morphology in natural systems and its preservation by proportionate growth remains a major scientific challenge. Yet, it is conceivable that if the basic mechanisms of growth and the coupled kinetic…
This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP…
We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…