Related papers: Growth kinetics effects on self-assembled InAs/InP…
Properties of the Kondo effect in quantum dots depend sensitively on the coupling parameters and so on the realization of the quantum dot -- the Kondo temperature itself becomes a mesoscopic quantity. Assuming chaotic dynamics in the dot,…
In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…
Quantum dots in magnetic fields are studied within the current spin density functional formalism avoiding any spatial symmetry restrictions of the solutions. We find that the maximum density droplet reconstructs into states with broken…
We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of…
We present a self-contained theoretical and computational framework for dynamics following photoexcitation in quantum dots near planar interfaces. A microscopic Hamiltonian parameterized by first principles calculations is merged with a…
We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the…
We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP…
Surface growth, by association or dissociation of material on the boundaries of a body, is ubiquitous in both natural and engineering systems. It is the fundamental mechanism by which biological materials grow, starting from the level of a…
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only…
We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated…
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for…
We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a…
We study a single, motionless three-dimensional droplet growing by adsorption of diffusing monomers on a 2D substrate. The diffusing monomers are adsorbed at the aggregate perimeter of the droplet with different boundary conditions. Models…
We demonstrate the ability to control the spontaneous emission dynamics of self-assembled quantum dots via the local density of optical modes in 2D-photonic crystals. We show that an incomplete 2D photonic bandgap is sufficient to…
Quantum dynamics of a particle in the vicinity of a hyperbolic point is considered. Expectation values of dynamical variables are calculated, and the singular behavior is analyzed. Exponentially fast extension of quantum dynamics is…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
A limited mobility nonequilibrium solid-on-solid dynamical model for kinetic surface growth is introduced as a simple description for the morphological evolution of a growing interface under random vapor deposition and surface diffusion…
This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer…